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CGHV96050F1 Dataheets PDF



Part Number CGHV96050F1
Manufacturers CREE
Logo CREE
Description Input/Output Matched GaN HEMT
Datasheet CGHV96050F1 DatasheetCGHV96050F1 Datasheet (PDF)

CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. .

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CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance. PN: CGHV96050F1 Package Type: 440210 Typical Performance Over 7.9 - 8.4 GHz (TC = 25˚C) Parameter Linear Gain Output Power Power Gain Power Added Efficiency 7.9 GHz 17.0 22.4 15.6 30 8.0 GHz 16.7 28.2 15.0 37 8.1 GHz 16.4 28.2 15.1 37 8.2 GHz 15.9 31.6 14.5 39 8.3 GHz 15.2 31.6 14.0 38 8.4 GHz 14.6 31.6 13.2 37 Units dB W dB % Note: Measured at -30 dBc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2 Features • 7.9 - 8.4 GHz Operation • • 80 W POUT typical >13 dB Power Gain • 33% Typical PAE • 50 Ohm Internally Matched • <0.1 dB Power Droop Applications • Satellite Communication • Terrestrial Broadband Large Signal Models Available for ADS and MWO Rev 2.2 - May 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV96050F1 Absolute Maximum Ratings (not simultaneous) Parameter Drain-source Voltage Gate-source Voltage Power Dissipation Storage Temperature Operating Junction Temperature Maximum Drain Current1 Maximum Forward Gate Current Soldering Temperature2 Screw Torque Symbol VDSS VGS PDISS TSTG TJ IDMAX IGMAX TS τ Rating 100 -10, +2 57.6 / 86.4 -65, +150 225 6 14.4 245 40 Thermal Resistance, Junction to Case RθJC 1.26 Thermal Resistance, Junction to Case RθJC Case Operating Temperature3 TC 2.16 -40, +150 Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library 3 See also, the Power Dissipation De-rating Curve on Page 10 Units Volts Volts Watts ˚C ˚C Amps mA ˚C in-oz ˚C/W ˚C/W ˚C 2 Conditions 25˚C 25˚C (CW / Pulse) 25˚C Pulse Width = 100 µs, Duty Cycle = 10%, PDISS = 86.4 W CW, 85˚C, PDISS = 57.6 W Electrical Characteristics (Frequency = 7.9 - 8.4 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. DC Characteristics1 Gate Threshold Voltage VGS(TH) -3.8 Gate Quiescent Voltage VQ – Saturated Drain Current2 IDS 11.5 Drain-Source Breakdown Voltage VBD 100 RF Characteristics3 Small Signal Gain S21 13.25 Input Return Loss S11 – Output Return Loss S22 – Power Gain3, 4 Power Gain3, 4 Power Added Efficiency3, 4 Power Added Efficiency3, 4 OQPSK Linearity3, 4 OQPSK Linearity3, 4 Output Mismatch Stress PG1 PG2 PAE1 PAE2 ACLR1 ACLR2 VSWR 10.75 10.75 18 18 – – – Typ. Max. -3.0 -2.3 -3.0 – 13.0 – – – 16 – –4.9 -3.0 –10.7 -5.5 15.6 – 13.5 – 25 – 27 – – -26 – -26 5:1 – Units Conditions V VDS = 10 V, ID = 14.4 mA V VDS = 40 V, ID = 500 mA A VDS = 6.0 V, VGS = 2.0 V V VGS = -8 V, ID = 14.4 mA dB VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm dB VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm dB VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm dB VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 7.9 GHz dB VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 8.4 GHz % VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 7.9 GHz % VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 8.4 GHz dBc VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 7.9 GHz dBc VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 8.4 GHz Y No damage at all phase angles, VDD = 40 V, IDQ = 500 mA Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured at -30 dBc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha: Filter = 0.2 4 Fixture loss de-embedded using the following offsets: At 7.9 GHz, input and output = 0.45 dB. At 8.4 GHz, input = 0.50 dB and output = 0.55 dB Rev 2.2 - May 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV96050F1 3 CGHV96050F1 Typical Performance Small Signal Gain, Input and Output Return Loss (dB) Small Signal Gain, Input and Output Return Loss (dB) Figure 1. Small Signal Gain and Return Loss vs Frequency of CGHV96050F1 measured in CGHV96050F1-AMP V = 40 V, I 500 mA Typical Small Signal Gain and Return Loss vs Frequency of the CGHVD96SV0D5S0F=140mVe,aIsDuQre=dD5i0nQ0CmGAHV96050F1-TB 20 15 10 S11 typ 5 S21 typ S22 typ 0 -5 -10 -15 -20 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 Frequency (GHz) Frequency (GHz) Intermodulation Distortion (dBc) Intermodulation Distortion (dBc) Figure 2. Intermodulation Distortion Performance .


TS81001 CGHV96050F1 CMPA0060002F


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