Document
CGHV96050F1
50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Description
Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
PN: CGHV96050F1 Package Type: 440210
Typical Performance Over 7.9 - 8.4 GHz (TC = 25˚C)
Parameter Linear Gain Output Power Power Gain Power Added Efficiency
7.9 GHz 17.0 22.4 15.6 30
8.0 GHz 16.7 28.2 15.0 37
8.1 GHz 16.4 28.2 15.1 37
8.2 GHz 15.9 31.6 14.5 39
8.3 GHz 15.2 31.6 14.0 38
8.4 GHz 14.6 31.6 13.2 37
Units dB W dB %
Note: Measured at -30 dBc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2
Features
• 7.9 - 8.4 GHz Operation
• •
80 W POUT typical >13 dB Power Gain
• 33% Typical PAE
• 50 Ohm Internally Matched
• <0.1 dB Power Droop
Applications • Satellite Communication • Terrestrial Broadband
Large Signal Models Available for ADS and MWO Rev 2.2 - May 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV96050F1
Absolute Maximum Ratings (not simultaneous)
Parameter Drain-source Voltage Gate-source Voltage Power Dissipation Storage Temperature Operating Junction Temperature Maximum Drain Current1 Maximum Forward Gate Current Soldering Temperature2 Screw Torque
Symbol
VDSS VGS PDISS TSTG TJ IDMAX IGMAX TS τ
Rating 100 -10, +2 57.6 / 86.4 -65, +150 225 6 14.4 245 40
Thermal Resistance, Junction to Case
RθJC
1.26
Thermal Resistance, Junction to Case
RθJC
Case Operating Temperature3
TC
2.16 -40, +150
Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library 3 See also, the Power Dissipation De-rating Curve on Page 10
Units Volts Volts Watts ˚C ˚C Amps mA ˚C in-oz
˚C/W
˚C/W ˚C
2
Conditions 25˚C 25˚C (CW / Pulse)
25˚C
Pulse Width = 100 µs, Duty Cycle = 10%, PDISS = 86.4 W CW, 85˚C, PDISS = 57.6 W
Electrical Characteristics (Frequency = 7.9 - 8.4 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol Min.
DC Characteristics1
Gate Threshold Voltage
VGS(TH)
-3.8
Gate Quiescent Voltage
VQ
–
Saturated Drain Current2
IDS
11.5
Drain-Source Breakdown Voltage VBD
100
RF Characteristics3
Small Signal Gain
S21
13.25
Input Return Loss
S11
–
Output Return Loss
S22
–
Power Gain3, 4 Power Gain3, 4 Power Added Efficiency3, 4 Power Added Efficiency3, 4 OQPSK Linearity3, 4 OQPSK Linearity3, 4 Output Mismatch Stress
PG1 PG2 PAE1 PAE2 ACLR1 ACLR2 VSWR
10.75 10.75 18 18 – – –
Typ. Max.
-3.0 -2.3
-3.0 –
13.0 –
–
–
16 –
–4.9 -3.0
–10.7 -5.5
15.6 –
13.5 –
25 –
27 –
–
-26
–
-26
5:1 –
Units Conditions
V
VDS = 10 V, ID = 14.4 mA
V
VDS = 40 V, ID = 500 mA
A
VDS = 6.0 V, VGS = 2.0 V
V
VGS = -8 V, ID = 14.4 mA
dB VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm
dB VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm
dB VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm
dB VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 7.9 GHz
dB VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 8.4 GHz
%
VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 7.9 GHz
%
VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 8.4 GHz
dBc VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 7.9 GHz
dBc VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 8.4 GHz
Y
No damage at all phase angles, VDD = 40 V, IDQ = 500 mA
Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured at -30 dBc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha: Filter = 0.2 4 Fixture loss de-embedded using the following offsets: At 7.9 GHz, input and output = 0.45 dB. At 8.4 GHz, input = 0.50 dB and output = 0.55 dB
Rev 2.2 - May 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV96050F1
3
CGHV96050F1 Typical Performance
Small Signal Gain, Input and Output Return Loss (dB)
Small Signal Gain, Input and Output Return Loss (dB)
Figure 1. Small Signal Gain and Return Loss vs Frequency of CGHV96050F1 measured in CGHV96050F1-AMP V = 40 V, I 500 mA Typical Small Signal Gain and Return Loss vs Frequency
of the CGHVD96SV0D5S0F=140mVe,aIsDuQre=dD5i0nQ0CmGAHV96050F1-TB
20
15
10
S11 typ
5
S21 typ
S22 typ
0
-5
-10
-15
-20
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
Frequency (GHz)
Frequency (GHz)
Intermodulation Distortion (dBc) Intermodulation Distortion (dBc)
Figure 2. Intermodulation Distortion Performance .