CMPA0060002F

CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach, enabling extremely wide bandwidths to be achieved in a small footprint screw-down package featuring a copper-tungsten heat sink. PaPckNa:gCeMTPyApe0:076800000129F Typical Performance Over 20 MHz - 6.0 GHz (TC = 25˚C) Parameter Gain 20 MHz 19.9 0.5 GHz 18.8 1.0 GHz 17.8 2.0 GHz 16.8 3.0 GHz 16.8 4.0 GHz 17.5 5.0 GHz 18.5 Saturated Output Power, P1 SAT 4.3 4.1 4.5 4.2 3.7 3.9 4.8 Power Gain @ P1 SAT 14.7 13.1 12.6 12.2 12.6 10.9 12.2 PAE @ P1 SAT 34 28 29 28 24 26 33 Note1: PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 2-4 mA. Note2: VDD = 28 V, IDQ = 100 mA 6.0 GHz 16.5 3.7 9.5 20 Units dB W dB % Features 17 dB Small Signal Gain 3 W Typical PSAT Operation up to 28 V High Breakdown Voltage High Temperature Operation 0.5” x 0.5” total product size Applications Ultra Broadband Amplifiers Fiber Drivers Test Instrum...