CMPA0060025F

CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables extremely wide bandwidths to be achieved in a small footprint screw-down package. PaPckNa:gCeMTPyApe0:076800002159F Typical Performance Over 20 MHz - 6.0 GHz (TC = 25˚C) Parameter Gain Output Power @ PIN = 32 dBm Power Gain @ PIN = 32 dBm Efficiency @ PIN = 32 dBm Note1: VDD = 50 V, IDQ = 500 mA 20 MHz 21.4 26.9 12.3 63 0.5 GHz 20.1 30.2 12.8 55 1.0 GHz 19.3 26.3 12.2 40 2.0 GHz 16.7 23.4 11.7 31 3.0 GHz 16.6 24.5 11.9 33 4.0 GHz 16.8 24.0 11.8 31 5.0 GHz 15.7 20.9 11.3 28 6.0 GHz 15.5 18.6 10.7 26 Units dB W dB % Features 17 dB Small Signal Gain 25 W Typical PSAT Operation up to 50 V High Breakdown Voltage High Temperature Operation 0.5” x 0.5” total product size Applications Ultra Broadband Amplifiers Test Instrumentation EMC Amplifier Drivers Rev 4.0 – May 2015 Subject to change without notice. www.cree.com/wireless Figure 1. 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Parameter Symbol Drain-source Voltage Gate-source Volta...