CMPA2560025F

CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier enabling very wide bandwidths to be achieved in a small footprint screw-down package featuring a CopperTungsten heat-sink. PaPckNa:gCeMTPyApe2:576800002159F Typical Performance Over 2.5-6.0 GHz (TC = 25˚C) Parameter 2.5 GHz 4.0 GHz 6.0 GHz Gain 27.5 24.3 23.1 Saturated Output Power, P1 SAT 35.8 37.5 25.6 Power Gain @ POUT 43 dBm 23.1 20.9 16.3 PAE @ POUT 43 dBm 31.5 32.8 30.7 Note1: PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA. Units dB W dB % Features 24 dB Small Signal Gain 25 W Typical PSAT Operation up to 28 V High Breakdown Voltage High Temperature Operation Applications Ultra Broadband Amplifiers Fiber Drivers Test Instrumentation EMC Amplifier Drivers Rev 3.0 – May 2015 Subject to change without notice. www.cree.com/rf Figure 1. 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Parameter Drain-source Voltage ...