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BFS20

RECTRON

NPN Transistor

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) BFS20 FEATURES * Power dissi...


RECTRON

BFS20

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Description
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) BFS20 FEATURES * Power dissipation PCM : 0.25 W (Tamb=25OC) * Collector current ICM : 0.025 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient temperature unless otherwise specified. Single phase , half wave, 60HZ, resistive or inductive load. For capacitive load, derate current by 20%. ELECTRICAL CHARACTERISTICS ( @ TA = 25OC unless otherwise noted ) CHARACTERISTICS Collector-base breakdown voltage (IC= 100mA, IE=0) Collector-emitter breakdown voltage (IC= 100mA, IB=0) Emitter-base breakdown voltage (IE= 100mA, IC=0) Collector cut-off current (VCB= 20V, IE=0) Collector cut-off current (VCE= 15V, IC=0) Collector cut-off current (VEB= 4V, IC=0) DC current gain (VCE= 10V, IC= 7mA) Collector-emitter saturation voltage (IC= 10mA, IB= 1mA) Base - emitter voltage (IC= 7mA, VCE= 10V) Transition frequency (VCE= 10V, IC= 5mA, f=100MHZ) SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(on) fT Marking Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)". SOT-23 COLLECTOR 3 BASE 1 2 EMITTER 0.006(0.15) 0.003(0.08) 0.055(1.40) 0.047(1.20) 0.020(0.50) ...




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