RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)
BFS20
FEATURES
* Power dissi...
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR
TRANSISTORS
TRANSISTOR(
NPN)
BFS20
FEATURES
* Power dissipation
PCM :
0.25
W (Tamb=25OC)
* Collector current
ICM :
0.025
A
* Collector-base voltage
V(BR)CBO : 30
V
* Operating and storage junction temperature range
TJ,Tstg: -55OC to +150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient temperature unless otherwise specified.
Single phase , half wave, 60HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25OC unless otherwise noted )
CHARACTERISTICS Collector-base breakdown voltage (IC= 100mA, IE=0) Collector-emitter breakdown voltage (IC= 100mA, IB=0) Emitter-base breakdown voltage (IE= 100mA, IC=0) Collector cut-off current (VCB= 20V, IE=0) Collector cut-off current (VCE= 15V, IC=0) Collector cut-off current (VEB= 4V, IC=0) DC current gain (VCE= 10V, IC= 7mA) Collector-emitter saturation voltage (IC= 10mA, IB= 1mA) Base - emitter voltage (IC= 7mA, VCE= 10V) Transition frequency (VCE= 10V, IC= 5mA, f=100MHZ)
SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO
ICBO ICEO IEBO hFE VCE(sat) VBE(on)
fT
Marking Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)".
SOT-23
COLLECTOR 3
BASE 1
2 EMITTER
0.006(0.15) 0.003(0.08)
0.055(1.40) 0.047(1.20)
0.020(0.50) ...