STL25N60M2-EP

STL25N60M2-EP N-channel 600 V, 0.184 Ω typ., 16 A MDmesh™ M2 EP Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max. ID 5 STL25N60M2-EP 650 V 0.206 Ω 16 A 4 32 1 PowerFLAT™ 8x8 HV Figure 1: Internal schematic diagram  Extremely low gate charge  Excellent output capacitance (COSS) profile  Very low turn-off switching losses  100% avalanche tested  Zener-protected Applications  Switching applications  Tailored for Very High Frequency Converters (f > 150 kHz) Order code STL25N60M2-EP Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. Table 1: Device summary Marking Package 25N60M2EP PowerFLAT™ 8x8 HV Packaging Tape and reel November 2015 DocID027254 Rev 3 This is information on a product in full production. 1/16 www.st.com Contents Contents STL25N60M2-EP 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ............