STL33N60M2

STL33N60M2 Datasheet N-channel 600 V, 0.115 Ω typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package 5 432 1 PowerFLAT 8x8 HV Drain(5) Gate(1) Driver source (2) Power source (3, 4) NG1DS2PS34D5Z Features Order code V DS @ T Jmax STL33N60M2 650 V Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected RDS(on)max 0.135 Ω ID 22 A Applications Switching applications LLC converters, resonant converters Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STL33N60M2 Product summary Order code STL33N60M2 Marking 33N60M2 Package PowerFLAT™ 8x8 HV Packing Tape & reel DS9512 - Rev 4 - June 2019 For further information contact your local STMicroelectronics sales office. www.st.com STL33N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25 °C ID (1) Drain current (continuous) at TC = 100 °C IDM (2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy EAS (starting Tj =...