STL7NM60N

STL7NM60N N-channel 600 V, 0.805 Ω, 5.8 A PowerFLAT™ 5x5 MDmesh™ II Power MOSFET Features Order code STL7NM60N VDSS @ TJMAX 650 V RDS(on) max. < 0.90 Ω ID 5.8 A(1) 1. The value is rated according Rthj-case ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 87 11 5 4 12 14 1 PowerFLAT™ 5x5 Figure 1. Internal schematic diagram D DD Pin 1 14 13 12 11 G (not connected) Drain S2 10 S S3 9S S4 5 6 7 8S DD D Top view Table 1. Device summary Order code STL7NM60N Marking 7NM60N Package PowerFLAT™ 5x5 Packaging Tape and reel November 2011 Doc ID 18348 Rev 2 1/13 www.st.com 13 Contents Contents STL7NM60N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package m...