STL86N3LLH6AG

STL86N3LLH6AG Datasheet Automotive-grade N-channel 30 V, 4 mΩ typ., 80 A STripFET™ H6 Power MOSFET in a PowerFLAT™ 5x6 package Features Order code VDS RDS(on) max. ID STL86N3LLH6AG 30 V 4 3 2 1 PowerFLAT™ 5x6 D(5, 6, 7, 8) 8 76 5 AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Logic level Wettable flank package G(4) Applications 5.2 mΩ 80 A 12 34 Switching applications S(1, 2, 3) Top View AM15540v2 Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STL86N3LLH6AG Product summary Order code STL86N3LLH6AG Marking 86N3LLH6 Package PowerFLAT™ 5x6 Packing Tape and reel DS10615 - Rev 5 - February 2019 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25 °C ID (1) Drain current (continuous) at TC = 70 °C ID (1) Drain current (continuous) at TC = 100 °C IDM , (2) (1) Drain current (pulsed) ID (3) Drain current (continuous) at Tpcb = 25 °C ID (3) Drain current (continuous) at Tpcb = 70 °C ID (3) Drain current (continuous) at Tpcb = 100 °C IDM, (2) (3) Drain current (pulsed) PTOT (1) ...