STL8DN6LF3

STL8DN6LF3 Datasheet Automotive-grade dual N-channel 60 V, 22.5 mΩ typ., 7.8 A STripFET F3 Power MOSFET in a PowerFLAT 5x6 double island package Features Order code STL8DN6LF3 VDS 60 V RDS(on) max. 30 mΩ ID 7.8 A 1 S2 Drain on rear side 2 G2 3 S1 4 G1 8 D2 7 6 D1 5 AEC-Q101 qualified Logic level VGS(th) 175 °C maximum junction temperature 100% avalanche rated Wettable flank package Applications Switching applications Description This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. NG14G22D1D2RSS13S21 Product status link STL8DN6LF3 Product summary Order code STL8DN6LF3 Marking 8DN6LF3 Package PowerFLAT 5x6 double island Packing Tape and reel DS8667 - Rev 7 - March 2020 For further information contact your local STMicroelectronics sales office. www.st.com STL8DN6LF3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage VDS Drain-source voltage ID(1) Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C Drain current (continuous) at Tpcb = 25 °C ID(2) Drain current (continuous) at Tpcb = 100 °C IDM(2)(3) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C PTOT(2) Total power dissipation at Tpcb = 25 °C IAV Non-repetitive avalanche current EAS(4) Single pulse avalanche energy Tstg Stora...