BZX784B5V6

BZX784B5V6 SURFACE MOUNT SILICON ZENER DIODES FEATURES Planar Die construction 200mW Power Dissipation Ideally Suited for Automated Assembly Processes In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case: SOD-723, Molded Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Polarity: See Diagram Below Approx. Weight: 0.00077 gram Mounting Position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Parameter Maximum Power Dissipation (Notes A) at 25OC Operating Junction and StorageTemperature Range Symbol PD TJ Value 200 -55 to +150 Units mW OC ELECTRICAL CHARACTERISTICS Part Number BZX784B5V6 Nominal Zener Voltage Nom. V 5.6 VZ @ I ZT Min. V 5.49 Max. V 5.71 Max. Zener Impedance ZZT @ I ZT Ω mA 40 5.0 ZZK @ I ZK Ω mA 400 1.00 Max. Reverse Leakage Current I R @ VR µA V 1.0 2.0 Marking Code WA NOTES: A. Mounted on 5.0mm2(.013mm thick) land areas. REV.0.1-OCT.30.2008 PAGE . 1 POWER DISSIPATION, Watts BZX784B5V6 TEMPERATURE COEFFICIENT,(mA/OC) 0.6 0.5 TA=25OC 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 150 TEMPERATURE (OC) Fig.1 STEADY STATE POWER DERATING 100 10 1 10 100 NOMINAL ZENER VOLTAGE,VOLTS Fig.2 TEMPERATURE COEFFICENTS 1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001 0 10 20 +150 OC +25 OC -55 OC 30 40 50 60 70 80 90 NORMAL ZENER VOLTAGE, VOLTS Fig.3 TYPICAL LEAKAGE CURRENT FORWARD CURRENT,mA 1000 100 10 150OC 75OC 25OC 5OC 1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 FORWARD VOLTAGE, VOLTS 1.1 1.2 Fig.4 TYPICAL...