STL120N2VH5

STL120N2VH5 N-channel 20 V, 0.002 Ω, 28 A STripFET™ V Power MOSFET in PowerFLAT™ 5x6 package Features Order code STL120N2VH5 VDSS 20 V RDS(on) max < 0.003 Ω ID 28 A ■ Improved die-to-footprint ratio ■ Very low profile package ■ Very low thermal resistance ■ Conduction losses reduced ■ Switching losses reduced ■ 2.5 V gate drive ■ Very low threshold device Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. 1 2 3 4 PowerFLAT™ 5x6 Figure 1. Internal schematic diagram    $$$$ '333   "OTTOM6IEW   4OP6IEW !-6 Table 1. Device summary Order code STL120N2VH5 Marking 120N2VH5 Package PowerFLAT™ 5x6 Packaging Tape and reel March 2012 Doc ID 15603 Rev 2 1/18 www.st.com 18 Contents Contents STL120N2VH5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging m...