STL16N1VH5

STL16N1VH5 N-channel 12 V, 0.0022 Ω , 16 A, PowerFLAT™ (3.3 x 3.3) STripFET™ V Power MOSFET Features Order code VDSS RDS(on) max ID STL16N1VH5 12 V 0.003 Ω 16 A (1) t(s)1. The value is rated according Rthj-pcb c■ Improved die-to-footprint ratio u■ Very low profile package (1mm max) rod■ Very low thermal resistance P■ Very low gate charge te■ Very low on-resistance le■ Optimized to be driven @ 2.5 V so■ In compliance with the 2002/95/EC European bdirective - OApplications t(s)■ Switching applications ducDescription roThis device is an N-channel Power MOSFET Pdeveloped using STMicroelectronics’ teSTripFET™V technology. The device has been leoptimized to achieve very low on-state resistance, contributing to an FOM that is among the best in Obsoits class. PowerFLAT™(3.3x3.3) Figure 1. Internal schematic diagram 123 4 SSS G DDD D 876 5 BOTTOM VIEW Table 1. Device summary Order code STL16N1VH5 Marking 16N1V Package PowerFLAT™ (3.3 x 3.3) Packaging Tape and reel June 2011 Doc ID 16802 Rev 2 1/14 www.st.com 14 Contents Contents STL16N1VH5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 ...