STP220N6F7

STP220N6F7 N-channel 60 V, 0.0021 Ω typ., 120 A, STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS STP220N6F7 60 V RDS(on)max 0.0024 Ω ID 120 A PTOT 237 W  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STP220N6F7 Table 1: Device summary Marking Package 220N6F7 TO-220 Packaging Tube October 2015 DocID026547 Rev 3 This is information on a product in full production. 1/13 www.st.com Contents Contents STP220N6F7 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 TO-220 package mechanical data .................................................. 10 ...