STW27N60M2-EP

STP27N60M2-EP, STW27N60M2-EP N-channel 600 V, 0.150 Ω typ., 20 A MDmesh™ M2 EP Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data TAB Features Order code V DS RDS(on) max ID STP27N60M2-EP 600 V 0.163 Ω 20 A STW27N60M2-EP 600 V 0.163 Ω 20 A 3 2 1 TO-220 3 2 1 TO-247  Extremely low gate charge  Excellent output capacitance (COSS) profile  Very low turn-off switching losses  100% avalanche tested  Zener-protected Figure 1: Internal schematic diagram Applications  Switching applications  Tailored for very high frequency converters (f > 150 kHz) Order code STP27N60M2-EP STW27N60M2-EP Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and an improved vertical structure, these devices exhibit low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters. Table 1: Device summary Marking Package Packaging 27N60M2EP TO-220 TO-247 Tube December 2015 DocID028723 Rev 1 This is information on a product in full production. 1/16 www.st.com Contents Contents STP27N60M2-EP, STW27N60M2-EP 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)..............