STPSC12H065C

STPSC12H065C 650 V power Schottky silicon carbide diode $ . $ $ $ . 72$% Features  No or negligible reverse recovery  Switching behavior independent of temperature  High forward surge capability  ECOPACK®2 compliant component Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature. Especially suited for use in interleaved or bridgeless topologies, this dual-diode rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. Table 1. Device summary Symbol Value IF(AV) VRRM Tj (max) 2x6A 650 V 175 °C December 2015 This is information on a product in full production. DocID024809 Rev 3 1/8 www.st.com Characteristics 1 Characteristics STPSC12H065C Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM IF(RMS) IF(AV) IFSM IFRM Repetitive peak reverse voltage Forward rms current Average forward current Surge non repetitive forward current Repetitive peak forward current Tc = 135 °C(1), DC Tc = 135 °C(2), DC Per diod...