STPSC8H065

STPSC8H065 Datasheet 650 V, 8 A high surge silicon carbide power Schottky diode A K K TO-220AC K A K A K TO-220AC insulated K D²PAK A NC DPAK A NC Features No reverse recovery charge in application current range Switching behavior independent of temperature High forward surge capability Insulated package TO-220AC Ins: – Insulated voltage: 2500 VRMS – Typical package capacitance: 7 pF Power efficient product ECOPACK®2 compliant component Applications Switch mode power supply PFC DCDC converters LLC topologies Boost diode Product status STPSC8H065 Product summary Symbol Value IF(AV) 8A VRRM 650 V Tj(max.) 175 °C Product label Description This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. This STPSC8H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. DS9225 - Rev 8 - January 2020 For further information contact your local STMicroelectronics sales office. www.st.com STPSC8H065 Characteristics 1 Characteristics Table 1. Absolut...