STTH1R04

STTH1R04 Ultrafast recovery diode Features ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature Description The STTH1R04 series uses ST's new 400 V planar Pt doping technology. The STTH1R04 is specially suited for switching mode base drive and transistor circuits. Packaged in axial and surface mount packages, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. AK DO-41 STTH1R04 DO-15 STTH1R04Q Band indicates cathode side. SMA STTH1R04A SMB STTH1R04U Table 1. Device summary IF(AV) VRRM Tj (max) VF (typ) trr (typ) 1A 400 V 175 °C 0.9 V 14 ns May 2008 Rev 1 1/10 www.st.com Characteristics 1 Characteristics STTH1R04 Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage IF(AV) Average forward current, δ = 0.5 DO-41 DO-15 SMA Tlead = 100 °C Tlead = 105 °C Tlead = 125 °C IFSM SMB Tlead = 140 °C Surge non repetitive forward current tp = 10 ms Sinusoidal Tstg Storage temperature range Tj Maximum operating junction temperature(1) 1. On infinite heatsink with 10 mm lead length 400 1.0 30 -65 to +175 175 V A A °C °C Table 3. Thermal parameters Symbol Parameter Value Unit Rth(j-l) Rth(j-l) Junction to lead Junction to lead Lead length = 10 mm on infinite heatsink DO-41 DO-15 SMA SMB 55 50 °C/W 35 25 Table 4. Static electrical characteristics Symbol Pa...