STW58N65DM2AG

STW58N65DM2AG Automotive-grade N-channel 650 V, 0.058 Ω typ., 48 A MDmesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code STW58N65DM2AG VDS 650 V RDS(on) max. 0.065 Ω ID 48 A PTOT 360 W  Designed for automotive applications and AEC-Q101 qualified  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Order code STW58N65DM2AG Table 1: Device summary Marking 58N65DM2 Package TO-247 Packing Tube September 2015 DocID028347 Rev 2 This is information on a product in full production. 1/12 www.st.com Contents Contents STW58N65DM2AG 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits .....................................................................