STW62NM60N

STW62NM60N Features N-channel 600 V, 0.04 Ω typ., 65 A, MDmesh™ II Power MOSFET in a TO-247 package Datasheet − production data Order code STW62NM60N VDS 600 V RDS(on) max 0.049 Ω ID 65 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-247 Figure 1. Internal schematic diagram $ ' Table 1. Device summary Order code STW62NM60N Marking 62NM60N 3 !-V Package TO-247 Packaging Tube December 2012 This is information on a product in full production. Doc ID 018945 Rev 3 1/13 www.st.com 13 Contents Contents STW62NM60N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . ....