N-CHANNEL MOSFET
STW65N65DM2AG
Automotive-grade N-channel 650 V, 0.042 Ω typ., 60 A Power MOSFET MDmesh™ DM2 in a TO-247 package
Datashe...
Description
STW65N65DM2AG
Automotive-grade N-channel 650 V, 0.042 Ω typ., 60 A Power MOSFET MDmesh™ DM2 in a TO-247 package
Datasheet - production data
3 2 1
TO-247
Figure 1: Internal schematic diagram
Features
Order code STW65N65DM2AG
VDS 650 V
RDS(on) max.
0.05 Ω
ID PTOT 60 A 446 W
Designed for automotive applications and AEC-Q101 qualified
Fast-recovery body diode Extremely low gate charge and input
capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Order code STW65N65DM2AG
Table 1: Device summary Marking
65N65DM2
Package TO-247
Packing Tube
August 2015
DocID028164 Rev 1
This is information on a product in full production.
1/12
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Contents
Contents
STW65N65DM2AG
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ...........................................................................
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