TN2010T

TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V(BR)DSS Min (V) 200 rDS(on) Max (W) 11 VGS(th) (V) 0.8 to 3.0 ID (A) 0.12 Features D Low On-Resistance: 9.5 W D Secondary Breakdown Free: 220 V D Low Power/Voltage Driven D Low Input and Output Leakage D Excellent Thermal Stability Benefits D Low Offset Voltage D Full-Voltage Operation D Easily Driven Without Buffer D Low Error Voltage D No High-Temperature “Run-Away” Applications D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control TO-236 (SOT-23) G1 S2 3D Top View TN2010T (R1)* *Marking Code for TO-236 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta TA= 25_C TA= 70_C Power Dissipation Maximum Junction-to-Ambient TA= 25_C TA= 70_C Operating Junction and Storage Temperature Range VDS VGS ID IDM PD RthJA TJ, Tstg 200 "20 0.12 0.08 0.34 0.35 0.22 357 –55 to 150 V A W _C/W _C Notes a. Pulse width limited by maximum junction temperature. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70203. Siliconix S-52426—Rev. C, 14-Apr-97 1 TN2010T Specificationsa Parameter Symbol Test Conditions Static Drain-SourceBreakdown Voltage Gate-Thresh...