TN2010T
N-Channel Enhancement-Mode MOSFET Transistor
Product Summary
V(BR)DSS Min (V) 200
rDS(on) Max (W) 11
VGS(th)...
TN2010T
N-Channel Enhancement-Mode MOSFET
Transistor
Product Summary
V(BR)DSS Min (V) 200
rDS(on) Max (W) 11
VGS(th) (V) 0.8 to 3.0
ID (A) 0.12
Features
D Low On-Resistance: 9.5 W D Secondary Breakdown Free: 220 V D Low Power/Voltage Driven D Low Input and Output Leakage D Excellent Thermal Stability
Benefits
D Low Offset Voltage D Full-Voltage Operation D Easily Driven Without Buffer D Low Error Voltage D No High-Temperature
“Run-Away”
Applications
D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Transistors, etc.
D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control
TO-236 (SOT-23)
G1 S2
3D
Top View TN2010T (R1)* *Marking Code for TO-236
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Currenta
TA= 25_C TA= 70_C
Power Dissipation Maximum Junction-to-Ambient
TA= 25_C TA= 70_C
Operating Junction and Storage Temperature Range
VDS VGS
ID IDM
PD RthJA TJ, Tstg
200 "20 0.12 0.08 0.34 0.35 0.22 357 –55 to 150
V
A
W _C/W
_C
Notes a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70203.
Siliconix S-52426—Rev. C, 14-Apr-97
1
TN2010T
Specificationsa
Parameter
Symbol
Test Conditions
Static
Drain-SourceBreakdown Voltage Gate-Thresh...