BCW66F

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) BCW66F FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.8 A * Collector-base voltage V(BR)CBO : 75 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient temperature unless otherwise specified. Single phase , half wave, 60HZ, resistive or inductive load. For capacitive load, derate current by 20%. ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Collector-base breakdown voltage (IC= 10mA, IE=0) Collector-emitter breakdown voltage (IC= 10mA, IB=0) Emitter-base breakdown voltage (IE= 10mA, IC=0) Collector cut-off current (VCB= 45V, IE=0) SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO Collector cut-off current (VEB= 4V, IC=0) DC current gain (VCE= 10V, IC= 0.1mA) IEBO DC current gain (VCE= 1V, IC= 10mA) DC current gain (VCE= 1V, IC= 100mA) hFE DC current gain (VCE= 2V, IC= 500mA) Collector-emitter saturation voltage (IC= 100mA, IB= 10mA) Collector-emitter saturation voltage (IC= 500mA, IB= 50mA) VCE(sat) Base-emitter saturation voltage (IC= 100mA, IB= 10mA) Base-emitter saturation voltage (IC= 500mA, IB= 50mA) VBE(sat) Transition frequency (VCE= 10V...