BCX19

SMD Type TransistIoCrs NPN General Purpose Transistors BCX19 Features High current (max. 500 mA). Low voltage (max. 45 V). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector current IC Peak collector current ICM Peak base current IBM Total power dissipation * Ptot Storage temperature Tstg Junction temperature Tj Operating ambient temperature Ramb Thermal resistance from junction to ambient * Rth j-a * Transistor mounted on an FR4 printed-circuit board. Rating 50 45 5 500 1 200 250 -65 to +150 150 -65 to +150 500 Unit V V V mA A mA mW K/W 0-0.1 +0.10.38 -0.1 1.Base 2.Emitter 3.collector Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage Base to emitter voltage * Collector capacitance Transition frequency * Pulse test: tp 300 ìs; d 0.02. Symbol Testconditons ICBO IE = 0; VCB = 20 V ICBO IE = 0; VCB = 20 V; Tj = 150 IEBO IC = 0; VEB = 5 V IC = 100mA; VCE = 1 V hFE IC = 300 mA;VCE = 1 V IC = 500 mA;VCE = 1 V VCE(sat) IC = 500 mA; IB = 50 mA VBE IC = 500 mA; VCE = 1 V CC IE = ie = 0; VCB = 10 V; f = 1 MHz fT IC = 10 mA; VCE = 5 V; f = 100 MHz Marking Marking U1 Min Typ Max Unit 100 nA 5 ìA 100 nA 100 6...