BCX52

Elektronische Bauelemente BCX52 PNP Transistors Plastic-Encapsulate Transistors RoHS Compliant Product Features 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER SOT-89 4.4~4.6 1.4~1.8 1.4~1.6 2.3~2.6 3.94~4.25 Power dissipation PCM: 0.5 Collector current ICM: -1 Collector-base voltage V(BR)CBO: -60 W (Tamb=25oC) A V Operating and storage junction temperature range TJ, Tstg: -55oC to +150oC 0.9~1.1 0.36~0.56 1.5Ref. 2.9~3.1 0.32~0.52 0.35~0.44 Dimensision in Millimeter ELECTRICAL CHARACTERISTICS (Tamb=25 oC unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions Ic=-100µA , IE=0 IC=-10mA , IB=0 IE=-10µA, IC=0 VCB=-30V, IE=0 VEB=-5V, IC=0 MIN MAX UNIT -60 V -60 V -5 V -0.1 µA -0.1 µA DC current gain BCX52 BCX52-10 BCX52-16 Collector-emitter saturation voltage Base-emitter voltage Transition frequency hFE(1) hFE(2) hFE(3) VCE(sat) VBE(ON) VCE=-2V, IC=-150mA VCE=-2V, IC= -5mA VCE=-2V, IC=-500mA IC=-500 mA, IB=-50mA IC=- 500mA, VCE=-2V 63 63 100 63 40 250 160 250 -0.5 -1 V V VCE= -5V, IC= -10mA fT f = 100MHz 50 MHz DEVICE MARKING BCX52=AE BCX52-10=AG BCX52-16=AM http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 1 ...