BD139

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS BD135 BD137 BD139 TO126 Plastic Package ECB Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD136, BD138, BD140 ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Emitter Voltage (RBE=1kΩ) Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Power Dissipation @ Tc=70ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCER VCBO VEBO IC ICM IB PD PD PD Tj, Tstg BD135 45 45 45 BD137 60 60 60 5.0 1.5 2.0 0.5 1.25 10 12.5 100 8.0 - 55 to +150 THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 100 10 ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage *VCEO (sus) IC=30mA, IB=0 BD135 BD137 BD139 Collector Cut off Current ICBO VCB=30V, IE=0 VCB=30V, IE=0, Tc=125ºC Emitter Cut off Current IEBO VEB=5V, IC=0 DC Current Gain *hFE IC=0.005A, VCE=2V IC=0.15A, VCE=2V IC=0.5A, VCE=2V *Pulse test:- Pulse width=300µs, duty cycle=2% MIN 45 60 80 25 40 25 BD139 80 100 100 UNIT V V V V A A A W mW/ºC W mW/ºC W ºC ºC/W ºC/W MAX UNIT V V V 0.1 µA 10 µA 10 µA 250 Continental Device India Limited Data Sheet Page 1 of 4 N...