(PDF) BD139 Datasheet PDF | Central Semiconductor





BD139 Datasheet PDF

Part Number BD139
Description NPN SILICON TRANSISTOR
Manufacture Central Semiconductor
Total Page 2 Pages
PDF Download Download BD139 Datasheet PDF

Features: Datasheet pdf BD135 BD137 BD139 NPN SILICON TRANSISTOR CentralTM Semiconductor Corp. DESCRIP TION: The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are NPN Silicon Epitax ial Planar Transistors designed for aud io amplifier and switching applications . MARKING: FULL PART NUMBER TO-126 CAS E MAXIMUM RATINGS: (TC=25°C) Collect or-Base Voltage Collector-Emitter Volt age Emitter-Base Voltage Continuous C ollector Current Peak Collector Curren t Continuous Base Current Peak Base C urrent Power Dissipation (Tmb≤70°C ) Power Dissipation (TA=25°C) Operat ing and Storage Junction Temperature T hermal Resistance Thermal Resistance SYMBOL BD135 BD137 BD139 VCBO 4 5 60 100 VCEO 45 60 80 VEB O 5.0 IC 1.5 ICM 2.0 IB 0.5 IBM 1.0 PD 8.0 PD 1.25 TJ, Tstg -65 to +150 ΘJmb 10 ΘJA 100 UNITS V V V A A A A W W °C ° C/W °C/W ELECTRICAL SYMBOL CHATREAS CTTCEORNISDTITICIOSN: (ST C=25°C unle ss otherwise MIN noted) TYP MAX ICBO VCB=30V 100 ICBO VCB.

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BD139 datasheet
BD135
BD137
BD139
NPN SILICON TRANSISTOR
CentralTM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BD135,
BD137, and BD139 are NPN Silicon Epitaxial
Planar Transistors designed for audio amplifier
and switching applications.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Peak Base Current
Power Dissipation (Tmb≤70°C)
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL BD135 BD137 BD139
VCBO
45
60 100
VCEO
45
60
80
VEBO
5.0
IC 1.5
ICM
2.0
IB 0.5
IBM
1.0
PD 8.0
PD 1.25
TJ, Tstg
-65 to +150
ΘJmb
10
ΘJA
100
UNITS
V
V
V
A
A
A
A
W
W
°C
°C/W
°C/W
ELECTRICAL
SYMBOL
CHATREASCTTCEORNISDTITICIOSN: (ST C=25°C
unless
otherwise
MIN
noted)
TYP
MAX
ICBO
VCB=30V
100
ICBO
VCB=30V, TC=125°C
10
IEBO
VEB=5.0V
100
BVCEO
IC=30mA (BD135)
45
BVCEO
IC=30mA (BD137)
60
BVCEO
IC=30mA (BD139)
80
VCE(SAT)
IC=500mA, IB=50mA
0.5
VBE(ON)
VCE=2.0V, IC=500mA
1.0
hFE
VCE=2.0V, IC=5.0mA
40
hFE
VCE=2.0V, IC=150mA
63
250
hFE
VCE=2.0V, IC=500mA
25
fT
VCE=5.0V, IC=50mA, f=100MHz
190
UNITS
nA
µA
nA
V
V
V
V
V
MHz
SYMBOL
TEST CONDITIONS
hFE
VCE=2.0V, IC=500mA
BD135-10
BD137-10
BD139-10
MIN MAX
63 160
BD135-16
BD137-16
BD139-16
MIN MAX
100 250
R3 (18-September 2009)

BD139 datasheet
CentralTM
Semiconductor Corp.
BD135
BD137
BD139
NPN SILICON TRANSISTOR
TO-126 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Collector
3) Base
Mounting Pad is
Common to Pin 2
MARKING:
FULL PART NUMBER
R3 (18-September 2009)





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