BD434

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS ECB BD433 BD435 BD437 BD439 BD441 NPN BD434 BD436 BD438 BD440 BD442 PNP TO126 Plastic Package Intended for use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Collector Base Voltage VCBO Collector Emitter Voltage VCES Collector Emitter Voltage VCEO Emitter Base Voltage VEBO Collector Current IC Collector Peak Current (t=10ms_ ICM Base Current IB Total Dissipation @ TC=25ºC PD Total Dissipation @ Ta=25ºC Derate above 25ºC PD Operating and Storage Junction Temperature Range Tj, Tstg BD433 BD434 22 22 22 BD435 BD436 32 32 32 BD437 BD438 45 45 45 5.0 4.0 7.0 1.0 36.0 1.25 10 BD439 BD440 60 60 60 - 65 to 150 BD441 BD442 80 80 80 UNIT V V V V A A A W W mW/ ºC ºC THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 3.5 100 ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION BD433 BD435 BD437 BD439 BD441 Collector Cut off Current Collector Cut off Current Emitter Cut off Current Collector Emitter Sustaining Voltage BD434 BD436 BD438 BD440 BD442 ICBO VCB=Rated VCBO, IE=0 <100 <100 <100 <100 <100 ICES VBE=0, VCE=Rated VCES <100 <100 <100 <100 <100 IEBO VEB=5V, IC=0 <1.0 <1.0 <1.0 <1.0 <1.0 *VCEO (sus) IC=100mA, IB=0 >22 >32 >45 >60 >80 Collector Emitter Saturation Voltage *VC...