SILICON CONTROLLED RECTIFIERS
2N6236-2N6241
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Availabl...
Description
2N6236-2N6241
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS (TC = 110°C unless otherwise noted)
Rating
Symbol
Value
Unit
Repetitive peak forward and reverse blocking voltage (1) (1/2 sine wave, RGK = 1000Ω, TC = -40 to +110°C) 2N6236 2N6237 2N6238 2N6239 2N6240 2N6241
VDRM VRRM
30 50 100 200 400 600
Volts
Non-repetitive peak reverse blocking voltage (1/2 sine wave, RGK = 1000Ω, TC = -40 to +110°C) 2N6236 2N6237 2N6238 2N6239 2N6240 2N6241
VRSM
50 100 150 250 450 650
Volts
Average on-state current (TC = -40 to +90°C) (TC = 100°C)
IT(AV)
2.6 1.6
Amps
Surge on-state current (1/2 sine wave, 60Hz, TC = 90°C) (1/2 sine wave, 1.5ms, TC = 90°C)
Circuit fusing (TC = -40 to +110°C, t = 8.3ms)
ITSM 25 Amps 35
I2t 2.6
A2s
Peak gate power (pulse width = 10µs, TC = 90°C)
PGM 0.5 Watts
Average gate power (t = 8.3ms, TC = 90°C)
PG(AV)
0.1
Watts
Peak forward gate current
IGM 0.2 Amps
Peak reverse gate voltage Operating junction temperature range
VRGM TJ
6 -40 to 110
Volts °C
Storage temperature range
Tstg -40 to 150
°C
Stud torque
6 In. lb.
Note 1: Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices should not be tested with a constant source for forward or re...
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