MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
. . . PNPN device...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
. . . P
NPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. Passivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability Recommended Electrical Replacement for C106
G AK
Order this document by 2N6237/D
2N6237 thru
2N6241
SCRs 4 AMPERES RMS 50 thru 600 VOLTS
A
G AK
CASE 77-08 (TO-225AA)
STYLE 2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
*Repetitive Peak Forward and Reverse Blocking Voltage(1)
(1/2 Sine Wave)
2N6237
(RGK = 1000 ohms, TC = –40 to +110°C)
2N6238 2N6239
2N6240
2N6241
Symbol
VDRM or
VRRM
Value
50 100 200 400 600
Unit Volts
*Non-repetitive Peak Reverse Blocking Voltage
(1/2 Sine Wave, RGK = 1000 ohms, TC = –40 to +110°C)
2N6237 2N6238 2N6239 2N6240 2N6241
VRSM
100 150 250 450 650
Volts
*Average On-State Current (TC = –40 to +90°C) (TC = +100°C)
*Surge On-State Current (1/2 Sine Wave, 60 Hz, TC = +90°C) (1/2 Sine Wave, 1.5 ms, TC = +90°C)
Circuit Fusing (t = 8.3 ms)
IT(AV)
Amps
2.6
1.6
ITSM
Amps
25
35
I2t 2.6 A2s
*Peak Gate Power (Pulse Width = 10 µs, TC = 90°C)
PGM
0.5 Watts
*Indicates J...