P-Channel Enhancement Mode MOSFET
SSC8025GS6
P-Channel Enhancement Mode MOSFET with ESD Protection
Features
VDS VGS -20V ±8V
RDSon TYP 50m R@-4V5 60...
Description
SSC8025GS6
P-Channel Enhancement Mode MOSFET with ESD Protection
Features
VDS VGS -20V ±8V
RDSon TYP 50m R@-4V5 60m R@-2V5 70m R@-1V8 96m R@-1V5
ID ESD -4A 3kV
Applications
Load Switch
Portable Devices DCDC Conversion
Pin configuration
Top View
D
General Description
This device uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.5V and it is protected from ESD. These feathures make it suitable for use as a load switch or in PWM applications.
Package Information
GS
③
①②
SOT23 Unit:mm
SSC-4V0
http://www.afsemi.com
1/4
SSC8025GS6
Absolute Maximum Ratings @ TA = 25°C unless otherw ise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current(1) Pow er Dissipation(1)
Continuous Pulsed
Operating and Storage Junction Temperature Range
V DSS V GSS
ID
PD TJ, TSTG
Ratings
-20 ±8 -4 -20 450 -55 to +150
Unit
V V
A
mW °C
Electrical Characteristics @ TA = 25°C unless otherw ise noted
Parameter(2)
Symbol
Test Conditions
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Curren
V(BR)DSS IDSS
VGS = 0V, ID = -250uA VDS = -20V, VGS = 0V
Gate-Body Leakage Gate Threshold Voltage
IGSS VGS(TH)
VGS = ±8V, VDS = 0V VDS = VGS, ID = -250uA
Static Drain-Source On-Resistance
RDS (ON)
VGS = -4.5V, ID = -4A VGS = -2.5V, ID = -3A VGS = -1.8V, ID = -2A VGS = -1.5V, ID = -1A
Forward Transconductance Diode Forw ard Voltage Input Capacitance Output Capacita...
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