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MBR3045 Data Sheet

Schottky Barrier Rectifier

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MBR3045
INCHANGE Semiconductor Schottky Barrier Rectifier Product Specification MBR3045 FEATURES ·Dual Rectifier Conduction, Positive Center Tap ·Low Power Loss/High Efficiency ·High Current Capability ·High Surge Capacity ·Guarding for Overvoltage protection ·For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM DC Blocking Voltage 45 V IF(AV) IFSM Average Rectified Forward Current TC= 105℃ Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 30 275 A A TJ Junction Temperature 170 ℃ Tstg Storage Temperature Range -55~170 ℃ ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Width≤300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS VF Maximum Instantaneous Forward Voltage IF= 15A ; TC= 25℃ IR Maximum Instantaneous Reverse Current VR= 45V, TC= 25℃ MAX 0.69 20 UNIT V μA isc website:www.iscsemi.cn .


Inchange Semiconductor

MBR3045

MBR3045

Download MBR3045 Datasheet
INCHANGE Semiconductor Schottky Barrier Rectifier Product Specification MBR3045 FEATURES ·Dual Rectifier Conduction, Positive Center Tap ·Low Power Loss/High Efficiency ·High Current Capability ·High Surge Capacity ·Guarding for Overvoltage protection ·For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM DC Blocking Voltage 45 V IF(AV) IFSM Average Rectified Forward Current TC= 105℃ Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 30 275 A A TJ Junction Temperature 170 ℃ Tstg Storage Temperature Range -55~170 ℃ ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Width≤300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS VF Maximum Instantaneous Forward Voltage IF= 15A ; TC= 25℃ IR Maximum Instantaneous Reverse Current VR= 45V, TC= 25℃ MAX 0.69 20 UNIT V μA isc website:www.iscsemi.cn .


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