No. | Part # | Manufacturer | Description | Datasheet |
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DIODES |
40V P-Channel MOSFET and Benefits 100% Unclamped Inductive Switch (UIS) Test In Production Low On-Resistance Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMP4011SPSQ is suitable for |
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DIODES |
P-CHANNEL MOSFET and Benefits BVDSS -40V RDS(ON) MAX 10mΩ @ VGS = -10V 14mΩ @ VGS = -4.5V ID MAX TC = +25°C -76A -58A Description and Applications 100% Unclamped Inductive Switch (UIS) Test in Production Low On-Resistance Fast Switching Speed Lead-Free F |
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DIODES |
P-CHANNEL MOSFET and Benefits BVDSS -40V RDS(ON) MAX 11m @ VGS = -10V 19m @ VGS = -4.5V ID TC = +25°C -74A -55A Description This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP a |
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DIODES |
40V P-CHANNEL ENHANCEMENT MODE MOSFET and Benefits • Rated to +175°C – Ideal for High Ambient Temperature Environments • 100% Unclamped Inductive Switch (UIS) Test in Production • Low On-Resistance • Fast Switching Speed • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Anti |
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Diodes |
P-Channel MOSFET and Benefits • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • The DMP1045UQ i |
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DIODES |
P-CHANNEL MOSFET and Benefits BVDSS -40V RDS(ON) MAX 11m @ VGS = -10V 19m @ VGS = -4.5V ID TC = +25°C -74A -55A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, mak |
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DIODES |
P-CHANNEL ENHANCEMENT MODE MOSFET and Benefits • Rated to +175°C – Ideal for High Ambient Temperature Environments • 100% Unclamped Inductive Switch (UIS) Test in Production • Low On-Resistance • Fast Switching Speed • Wettable Flank for Improved Optical Inspections • Lead-Free Finis |
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DIODES |
P-CHANNEL ENHANCEMENT MODE MOSFET and Benefits 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Low On-Resistance ESD Protected up to 8kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. |
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DIODES |
30V P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes |
P-Channel MOSFET and Benefits 0.6mm Profile – Ideal for Low Profile Applications Low Gate Threshold Voltage Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Fo |
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Diodes |
P-Channel MOSFET V(BR)DSS -30V Description RDS(on) 25mΩ @ VGS = -10V 38mΩ @ VGS = -4.5V ID TC = +25°C -27A -22A 100% Unclamped Inductive Switch (UIS) Test In Production Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Note |
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Diodes |
P-Channel MOSFET • • • • • • • Low RDS(ON) – Ensures on State Losses are Minimized 0.6mm Profile – Ideal for Low Profile Applications 2 PCB Footprint of 4mm ESD Protected Gate Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (N |
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Diodes |
P-Channel MOSFET and Benefits Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switch (UIS) Test in Production Low On-Resistance Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen a |
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DIODES |
40V P-CHANNEL MOSFET BVDSS -40V RDS(ON) max 26mΩ @ VGS = -10V ID max TC = +25°C -50A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficienc |
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DIODES |
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET PCB Footprint of 4mm2 Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Maximum Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMP2110UFDBQ is suitable for a |
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DIODES |
20V P-CHANNEL ENHANCEMENT MODE MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen- and Antimony-Free. “Green” Device (Note 3) • The DMP2065UQ |
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DIODES |
P-CHANNEL ENHANCEMENT MODE MOSFET and Benefits • 100% Unclamped Inductive Switch (UIS) Test in Production • Low On-Resistance • Fast Switching Speed • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • This part is qualified to JEDEC |
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Diodes |
P-Channel MOSFET and Benefits Low On-Resistance Very Low Gate Threshold Voltage VGS(th) ≤ 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” De |
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Diodes |
P-Channel MOSFET 100% Unclamped Inductive Switch (UIS) Test In Production Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for H |
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Diodes |
P-Channel MOSFET and Benefits Low RDS(ON) – ensures on state losses are minimized. Small form factor thermally efficient package enables higher density end products. Occupies 33% of the board area occupied by SO-8, enabling smaller end product. Totally Lead-F |
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