GE D66 DataSheet

STMicroelectronics

VD66GY - high-sensitive 1.5-megapixel color Bayer global shutter image sensor

8 Hits • • Order code Description • Color Bayer, VD66GYCCA/RW bare die as reconstructed wafer • • Cutting-edge performance of ST proprietary pixel

D66EW3 - NPN POWER TRANSISTORS

7 Hits the 066 package offering: collector isolation from heat sink, TO-3 mounting compatibility and quick-connect terminals. The D66DW/EW also features a di

STMicroelectronics

VD6640 - Automotive 1.3-megapixel high-dynamic range image sensor

7 Hits • AEC-Q100 qualified • 1.3 megapixel resolution sensor (1304 x 980) in 1/2.7 inch optical format • High dynamic range (HDR) pixel architecture, up to

Analog Devices

AD6650 - Diversity IF to Baseband GSM/EDGE Narrowband Receiver

5 Hits 116 dB dynamic range Digital VGA I/Q demodulators Active low-pass filters Dual wideband ADC Programmable decimation and channel filters VCO and phase-

D66DV7 - NPN POWER TRANSISTORS

5 Hits • High Voltage: 400-500 VCEO(SUS); 50D-700 VCEV • High Current: 75 Amperes, IC (Peak) • High Gain: hFE 50 Minimum @ 50 Amperes, IC (hFE = 135, typica

D66DW1 - NPN POWER TRANSISTORS

5 Hits the 066 package offering: collector isolation from heat sink, TO-3 mounting compatibility and quick-connect terminals. The D66DW/EW also features a di

D66EW2 - NPN POWER TRANSISTORS

5 Hits the 066 package offering: collector isolation from heat sink, TO-3 mounting compatibility and quick-connect terminals. The D66DW/EW also features a di

D66DV5 - NPN POWER TRANSISTORS

4 Hits • High Voltage: 400-500 VCEO(SUS); 50D-700 VCEV • High Current: 75 Amperes, IC (Peak) • High Gain: hFE 50 Minimum @ 50 Amperes, IC (hFE = 135, typica

D66DV6 - NPN POWER TRANSISTORS

4 Hits • High Voltage: 400-500 VCEO(SUS); 50D-700 VCEV • High Current: 75 Amperes, IC (Peak) • High Gain: hFE 50 Minimum @ 50 Amperes, IC (hFE = 135, typica

D66GV6 - NPN POWER TRANSISTORS

4 Hits the D66 Package offering: collector isolation from heat sink, TO-3 mounting compatibility and quick-connect terminals. . The D66GV also features a

INCHANGE

2SD669 - NPN Transistor

4 Hits TIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ V(BR)EBO Emitter-Ba

INCHANGE

2SD663 - NPN Transistor

4 Hits ss otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)CBO Collector-Base Breakdo

Hitachi Semiconductor

HD66130T - 320-channel Low-voltage Segment Driver for Dot-Matrix STN Liquid Crystal Display

3 Hits • • • • • • • • • • • • • Display duty: Up to 1/240 Liquid crystal drive voltage: 2.6 to 5.5 V Number of liquid crystal drive circuits: 320 circuits O

Hitachi Semiconductor

HD66137T - High-Voltage Durable 240-Channel Common Driver for Dot-Matrix STN LCD

3 Hits • • • • • • • • Display duty: Up to 1/240 LCD drive voltage: 43 V max Built-in switching circuit (to generate –21.5 V) Number of LCD drive circuit: 24

Central Semiconductor

CPD66X - Low Leakage Diode Low Leakage Diode

3 Hits

D66DS5 - NPN POWER TRANSISTORS

3 Hits • High Voltage: 400-500 VCEO • High Current: 30 Amperes, Ie (Peak) • High Gain: hFE 40 Minimum @ 20 Amperes, Ie © ~15n E D66DS . D66ES DEVICE CI

D66DS6 - NPN POWER TRANSISTORS

3 Hits • High Voltage: 400-500 VCEO • High Current: 30 Amperes, Ie (Peak) • High Gain: hFE 40 Minimum @ 20 Amperes, Ie © ~15n E D66DS . D66ES DEVICE CI

D66DS7 - NPN POWER TRANSISTORS

3 Hits • High Voltage: 400-500 VCEO • High Current: 30 Amperes, Ie (Peak) • High Gain: hFE 40 Minimum @ 20 Amperes, Ie © ~15n E D66DS . D66ES DEVICE CI

D66EW1 - NPN POWER TRANSISTORS

3 Hits the 066 package offering: collector isolation from heat sink, TO-3 mounting compatibility and quick-connect terminals. The D66DW/EW also features a di

D66GV5 - NPN POWER TRANSISTORS

3 Hits the D66 Package offering: collector isolation from heat sink, TO-3 mounting compatibility and quick-connect terminals. . The D66GV also features a

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