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GTM |
TRANSISTOR , IB=-10mA IC=-100mA, IB=-10mA VCE=-6V, IC=-2mA VCE=-6V, IC=-150mA VCE=-10V, IC=-1mA, f=100MHz VCB=-10V, f=1MHz,IE=0 * Pulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions Classification Of hFE1 Rank Range A4Y 120-140 A4G 200-400 A4B 350-700 |
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GTM |
TRANSISTOR IC=100mA, IB=10mA VCE=6V, IC=1mA VCE=6V, IC=150mA VCE=1V, IC=10mA VCE=10V, IC=1mA, f=100MHz VCB=10V, f=1MHz, IE=0A * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions Classification Of hFE1 Rank Range L6P 90 - 180 L6Y 135 - 270 L6G 200 - |
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GTM |
TRANSISTOR , IB=10mA VCE=6V, IC=2mA VCE=6V, IC=150mA VCE=10V, IC=1mA, f=100MHz VCB=10V, f=1MHz * Pulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions Classification Of hFE1 Rank Range C4Y 120 - 240 C4G 200 - 400 C4B 350 - 700 1/2 ISSUED DATE :2004/12 |
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GTM |
TRANSISTOR High frequency current gain High speed switching For complementary use with PNP type GSMBT2907A ISSUED DATE :2005/01/12 REVISED DATE : N P N E P I TA X I A L P L A N A R T R A N S I S T O R The GSMBT2222A is designed for general purpose amplifier |
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GTM |
TRANSISTOR Low collector saturation voltage High speed switching For complementary use with NPN type GSMBT2222A ISSUED DATE :2004/12/22 REVISED DATE : P N P E P I TA X I A L P L A N A R T R A N S I S T O R The GSMBT2907A is designed for general purpose ampli |
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GTM |
TRANSISTOR NP N EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT4076 is designed for general purpose switching and amplifier applications. Excellent hFE Linearity : hFE2=25 (Min.) @VCE=6v, IC=400mA Complementary to GSMBT2015 Package Dimensions REF. A A1 A2 D E |
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GTM |
TRANSISTOR Complementary to GSMBT4403 High DC Current Gain: 100-300 at 150mA The GSMBT4401 is designed for general purpose switching and amplifier applications. ISSUED DATE :2004/12/20 REVISED DATE : NP N EP ITAX I AL PL ANAR T RANSI STOR Package Dimensions |
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GTM |
TRANSISTOR Complementary to GSMBT4401 High DC Current Gain: 100-300 at 150mA The GSMBT4403 is designed for general purpose switching and amplifier applications. ISSUED DATE :2004/12/20 REVISED DATE : P NP EP ITAX I AL PL ANAR T RANSI STOR Package Dimensions |
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GTM |
TRANSISTOR =10uA ,IC=0 VCB=15V, IE=0 VEB=4.5V, IC=0 IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=5V, IC=0.1mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=0.5mA, f=20MHz VCB=5V, IE=0, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% MHz pF 1/2 ISSUED DATE :2005/08/ |
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GTM |
TRANSISTOR PNP SILICON TRANSISTOR The GSMBTA64 is designed for application requiring extremely high current gain at collector to 500mA. High D.C. Current Gain Complementary to GSMBTA14 Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 |
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GTM |
ZENER DIODES 39B GSMBZ5240B Marking Code 18A 18B 18C 18D 18E 8A 8B 8C 8D 8E 8F 8G 8H 8J 8K 8L 8M 8N 8P 8Q Test Current IZT(mA) 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 Min 2.280 2.375 2.565 2.660 2.850 3.135 3.420 3.705 4.085 4.465 4.845 5.320 |
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GTM |
ZENER DIODES 39B GSMBZ5240B Marking Code 18A 18B 18C 18D 18E 8A 8B 8C 8D 8E 8F 8G 8H 8J 8K 8L 8M 8N 8P 8Q Test Current IZT(mA) 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 Min 2.280 2.375 2.565 2.660 2.850 3.135 3.420 3.705 4.085 4.465 4.845 5.320 |
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GTM |
ZENER DIODES 39B GSMBZ5240B Marking Code 18A 18B 18C 18D 18E 8A 8B 8C 8D 8E 8F 8G 8H 8J 8K 8L 8M 8N 8P 8Q Test Current IZT(mA) 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 Min 2.280 2.375 2.565 2.660 2.850 3.135 3.420 3.705 4.085 4.465 4.845 5.320 |
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SWITCHING DIODE 5 ~ +150 Unit V V V mA A pF nSec mW /W TJ, TSTG Electrical Characteristics (At TA = 25 Characteristics Reverse Breakdown Voltage Forward Voltage Symbol BVR VF Min. 300 Reverse Current IR - unless otherwise noted) Max. 0.85 1 1.25 100 100 Unit V V |
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GTM |
SWITCHING DIODE 4.0 225 V V mA A pF nSec mW Unit Electrical Characteristics at Ta = 25 Characteristic Forward Voltage Reverse Breakdown Reverse Current Symbol VF VR IR Min. 100 Max. 1 5 Unit V V uA IF=10mA IR=100uA VR=75V . Test Conditions Notes: 1. Measured at 1. |
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TRANSISTOR P NP EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT2014 is designed for general purpose switching and amplifier applications. Excellent hFE Linearity : hFE (0.1mA)/ hFE (2mA)=0.95 (Typ.) Complementary to GSMBT4075 Package Dimensions REF. A A1 A2 D |
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TRANSISTOR nit V V V nA nA mV mV mV mV IC=10uA , IE=0 IC=1mA ,IB=0 IE=10uA,IC=0 VCB=30V VEB=3V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA VCE=20V, IE=-10mA, f= |
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TRANSISTOR z pF pF ns ns ns ns Unit V V V nA nA V V V V IC=-10uA IC=-10mA IE=-10uA VCB=-30V VEB=-3V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-1V, IC=-0.1mA VCE=-1V, IC=-1mA VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-1V, IC=-100m |
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TRANSISTOR NP N EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT4075 is designed for general purpose switching and amplifier applications. Excellent hFE Linearity : hFE (0.1mA)/ hFE (2mA)=0.95 (Typ.) High hFE : hFE = 70~700 Complementary to GSMBT2014 Package Dim |
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GTM |
TRANSISTOR P NP EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT5401 is designed for general purpose applications requiring high breakdown voltage. High Collector-Emitter Breakdown Voltage (BVCEO=-150V @ IC=-1mA) Complementary to GSMBT5551 Package Dimensions RE |
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