| No. | Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|---|
|
|
|
Micron Technology |
NAND Flash Memory NAND Flash Memory MT29F1G08ABAEAWP, MT29F1G08ABAEAH4, MT29F1G08ABBEAH4 MT29F1G16ABBEAH4, MT29F1G08ABBEAHC, MT29F1G16ABBEAHC Features • Open NAND Flash Interface (ONFI) 1.0-compliant1 • Single-level cell (SLC) technology • Organization – Page size |
|
|
|
|
Micron Technology |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory MT28EW128ABA Features • Single-level cell (SLC) process technology • Density: 128Mb • Supply voltage – VCC = 2.7 –3.6V (program, erase, read) – VCCQ = 1.65 - VCC (I/O buffers) • Asynchronous random/page read – Page |
|
|
|
|
Micron Technology |
NAND Flash Memory NAND Flash Memory MT29F1G08ABADAWP, MT29F1G08ABBDAH4, MT29F1G08ABBDAHC, MT29F1G16ABBDAH4, MT29F1G16ABBDAHC, MT29F1G08ABADAH4 Features • Open NAND Flash Interface (ONFI) 1.0-compliant1 • Single-level cell (SLC) technology • Organization – Page size x |
|
|
|
|
Micron Technology |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory MT28EW01GABA Features • Single-level cell (SLC) process technology • Density: 1Gb • Supply voltage – VCC = 2.7 –3.6V (program, erase, read) – VCCQ = 1.65 - VCC (I/O buffers) • Asynchronous random/page read – Page si |
|
|
|
|
Micron Technology |
128Mb Multibank Burst Flash 32Mb ASYNC/PAGE CellularRAM COMBO Memory • Stacked die Combo package Includes two 64Mb Flash devices Choice of either one 32Mb or one 64Mb www.DataSheet4U.com CellularRAMÔ device • Basic configuration Flash Flexible multibank architecture 4 Meg x 16 Async/Page/Burst interface Support for tr |
|
|
|
|
Micron Technology |
NAND Flash Memory NAND Flash Memory MT29F2G08AACWP, MT29F4G08BACWP, MT29F8G08FACWP For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets Features • Organization • Page size x8: 2,112 bytes (2,048 + 64 bytes) • Page size x16: 1,056 |
|
|
|
|
Micron Technology |
MT29F16G08MAA NAND Flash Memory MT29F16G08MAAWP, MT29F32G08QAAWP, MT29F64G08TAAWP, MT29F16G08MAAC3, MT29F32G08RAAC3, MT29F64G08UAAC4, MT29F32G08RAAC6, MT29F64G08UAAC6, MT29F128G08WAAC6 Features • Open NAND Flash Interface (ONFI) 1.0 compliant • Multilevel cell ( |
|
|
|
|
Micron Technology |
MT29F2G08AABWP NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features • Organization: • Page size: x8: 2,112 bytes (2,048 + 64 bytes) x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes) www.Da |
|
|
|
|
Micron Technology |
1Gb x1: SPI NAND Flash Memory NAND Flash Memory Serial Peripheral Interface (SPI) MT29F1G01AAADD Features • Single-level cell (SLC) technology • Organization – Page size x1: 2112 bytes (2048 + 64 bytes) – Block size: 64 pages (128K + 4K bytes) – Plane size: 2 planes x 512 block |
|
|
|
|
Micron Technology |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory MT28EW256ABA Features • Single-level cell (SLC) process technology • Density: 256Mb • Supply voltage – VCC = 2.7 –3.6V (program, erase, read) – VCCQ = 1.65 - VCC (I/O buffers) • Asynchronous random/page read – Page |
|
|
|
|
Micron Technology |
FLASH AND SRAM COMBO MEMORY • Flexible dual-bank architecture • Support for true concurrent operations with no latency: Read bank b during program bank a and vice versa Read bank b during erase bank a and vice versa • Organization: 2,048K x 16 (Flash) 256K x 16 (SRAM) • Basic c |
|
|
|
|
Micron Technology |
(MT29F1GxxABB) 1Gb NAND Flash Memory 1Gb NAND Flash Memory MT29F1GxxABB For the latest data sheet, refer to Micron's Web site: www.micron.com/datasheets Features • Organization • Page size x8: 2,112 bytes (2,048 + 64 bytes) • Page size x16: 1,056 words (1,024 + 32 words) • Block size: |
|
|
|
|
Micron Technology |
NAND Flash Memory NAND Flash Memory MT29F1G08AACWP, MT29F1G08AACH4 MT29F1G08ABCHC, MT29F1G16ABCHC, MT29F1G08ABCH4, MT29F1G16ABCH4 Features • Open NAND Flash Interface (ONFI) 1.0-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 2112 bytes |
|
|
|
|
Micron Technology |
NAND Flash Memory NAND Flash Memory MT29F1G08AACWP, MT29F1G08AACH4 MT29F1G08ABCHC, MT29F1G16ABCHC, MT29F1G08ABCH4, MT29F1G16ABCH4 Features • Open NAND Flash Interface (ONFI) 1.0-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 2112 bytes |
|
|
|
|
Micron Technology |
NAND Flash Memory NAND Flash Memory MT29F1G08ABADAWP, MT29F1G08ABBDAH4, MT29F1G08ABBDAHC, MT29F1G16ABBDAH4, MT29F1G16ABBDAHC, MT29F1G08ABADAH4 Features • Open NAND Flash Interface (ONFI) 1.0-compliant1 • Single-level cell (SLC) technology • Organization – Page size x |
|
|
|
|
Micron Technology |
NAND Flash Memory NAND Flash Memory MT29F1G08ABAEAWP, MT29F1G08ABAEAH4, MT29F1G08ABBEAH4 MT29F1G16ABBEAH4, MT29F1G08ABBEAHC, MT29F1G16ABBEAHC Features • Open NAND Flash Interface (ONFI) 1.0-compliant1 • Single-level cell (SLC) technology • Organization – Page size |
|
|
|
|
Micron Technology |
NAND Flash Memory NAND Flash Memory MT29F1G08ABAEAWP, MT29F1G08ABAEAH4, MT29F1G08ABBEAH4 MT29F1G16ABBEAH4, MT29F1G08ABBEAHC, MT29F1G16ABBEAHC Features • Open NAND Flash Interface (ONFI) 1.0-compliant1 • Single-level cell (SLC) technology • Organization – Page size |
|
|
|
|
Micron Technology |
Parallel NOR Flash Automotive Memory Parallel NOR Flash Automotive Memory MT28FW01GABA1xPC-0AAT, MT28FW01GABA1xJS-0AAT Features • Single-level cell (SLC) process technology • Supply voltage – VCC = 2.7 –3.6V (program, erase, read) – VCCQ = 1.65 - VCC (I/O buffers) • Asynchronous random/ |
|
|
|
|
Micron Technology |
FLASH AND SRAM COMBO MEMORY • Flexible dual-bank architecture • Support for true concurrent operations with no latency: Read bank b during program bank a and vice versa Read bank b during erase bank a and vice versa • Organization: 2,048K x 16 (Flash) 256K x 16 (SRAM) • Basic c |
|
|
|
|
Micron Technology |
FLASH AND SRAM COMBO MEMORY • Flexible dual-bank architecture • Support for true concurrent operations with no latency: Read bank b during program bank a and vice versa Read bank b during erase bank a and vice versa • Organization: 2,048K x 16 (Flash) 256K x 16 (SRAM) • Basic c |
|