| No. | Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|---|
|
|
|
Siemens Semiconductor Group |
PNP Silicon High-Voltage Transistors conductor Group 1 07.94 BF 721 BF 723 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 BF 723 Collector-emitter breakdown voltage |
|
|
|
|
Siemens Semiconductor Group |
PNP Silicon High-Voltage Transistors conductor Group 1 07.94 BF 721 BF 723 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 BF 723 Collector-emitter breakdown voltage |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon RF Transistor 15 100 - V µA 10 nA 100 µA 100 40 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain I |
|
|
|
|
ON Semiconductor |
NPN Silicon Transistor AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* http://onsemi.com NPN SILICON TRA |
|
|
|
|
ON Semiconductor |
NPN Silicon Transistor AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* http://onsemi.com NPN SILICON TRA |
|
|
|
|
Zetex Semiconductors |
PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE:BF720 PARTMARKING DETAILS:BF721 BF721 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base |
|
|
|
|
Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTOR |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon RF Transistor Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 10 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC cur |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon RF Transistor R)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon RF Transistor V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current g |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon RF Transistor - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon RF Transistor V(BR)CEO 16 120 - V µA 100 nA 100 µA 10 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon RF Transistor R)CEO 15 100 - V µA 10 nA 100 µA 100 40 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current ga |
|
|
|
|
Siemens Semiconductor Group |
NPN SILICON RF TRANSISTOR |
|
|
|
|
Siemens Semiconductor Group |
NPN SILICON RF TRANSISTOR IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 20 V DC current gain, VCE = 10 V IC = 5 mA IC = 20 mA Collector-emitter saturation voltage IC = 20 mA, IB = |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon RF Transistor )EBO 3 IE = 10 µA, IC = 0 Collector-base cutoff current ICBO 100 nA 35 40 250 V 0.5 0.95 VCB = 20 V, IE = 0 DC current gain hFE IC = 5 mA, VCE = 10 V IC = 20 mA, VCE = 10 V Collector-emitter saturation voltage VCEsat VBEsat - IC = 20 mA, IB = |
|
|
|
|
ON Semiconductor |
NPN Silicon Transistor AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* http://onsemi.com NPN SILICON TRA |
|
|
|
|
ON Semiconductor |
PNP Silicon Transistor These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector -- Emitter Voltage Collector -- Base Voltage Collector -- Emitter Voltage Emitter -- Base Voltage Collector Current Tot |
|