ON Semiconductor MBR datasheet

No.	Part #	Manufacturer	Description
1	MBR1545CT	Inchange Semiconductor	Schottky Barrier Rectifier ·Center-Tap Configuation ·Guardring for Stress protection ·Low Forward Voltage ·High Operating Junction Temperature ·Guaranteed Reverse Avalanche ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operati
2	MBR10150CT	Inchange Semiconductor	Schottky Barrier Rectifier ·Metal silicon junction，majority carrier conduction ·Low Power Loss/High Efficiency ·High current capability，low forward voltage drop ·High surge capability ·Guardring for overvoltage protection ·High temperature soldering guaranteed ·RoHS product ·M
3	MBRA10100	Mospec Semiconductor	Schottky Barrier Rectifie Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 175 Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic
4	MBRF20150CT	Inchange Semiconductor	Schottky Barrier Rectifier ·Low power loss, high efficiency. ·Multilayer Metal -Silicon Potential Structure. ·Beautiful High Temperature Character. ·Have Over Voltage protect loop，high reliability. MECHANICAL CHARACTERISTICS ·Be optimized for ultra-low forward voltage drop to
5	MBR1560	Inchange Semiconductor	Schottky Barrier Rectifier ·Metal of silicon rectifier, majonty carrier conduction ·Guard ring for transient protection ·Low power loss high efficiency ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable oper
6	MBR1645CT	Inchange Semiconductor	Schottky Barrier Rectifier ·Low Forward Voltage ·170℃ Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power Loss/High Efficiency ·High Surge Capacity ·Low Stored Charge Majority Carrier Conduction MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All
7	MBR30200PT	Taiwan Semiconductor	Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 612
8	MBR3045CT	Digitron Semiconductors	30 A SCHOTTKY RECTIFIERS  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Peak repetitive rev
9	MBRI20100CT	Taiwan Semiconductor	20.0Amps Surface Mount Schottky Barrier Rectifier Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High Surge capability
10	MBR20200CT	ON Semiconductor	Dual Schottky Rectifier and Benefits  Low Forward Voltage  Low Power Loss/High Efficiency  High Surge Capacity  175C Operating Junction Temperature  20 A Total (10 A Per Diode Leg)  This is a Pb-Free Device* Applications  Power Supply − Output Rectification  Power
11	MBR340NG	American First Semiconductor	3.0A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitax
12	MBR3150NG	American First Semiconductor	3.0A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitax
13	MBR30L60CT	Taiwan Semiconductor	Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL D
14	MBR1H100SFT3G	ON Semiconductor	Surface Mount Schottky Power Rectifier • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 94 V−0 • Package Designed for Optimal Automated Board Assembly • ESD Ratings: Mac
15	MBR730	Inchange Semiconductor	Schottky Barrier Rectifier ·Schottky Barrier Chip ·Guard Ring Die Construction for Transient Protection ·Low Power Loss/High Efficiency ·High Surge Capability ·High Current Capability，Low Forward Voltage Drop ·Minimum Lot-to-Lot variations for robust device performance and rel
16	MBRB2045CT	General Semiconductor	SCHOTTKY RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low
17	MBRB2060CT	General Semiconductor	SCHOTTKY RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low
18	MBRS360T3	ON Semiconductor	SCHOTTKY BARRIER RECTIFIERS epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are
19	MBRF3080CT	Taiwan Semiconductor	Isolated 30.0AMPS Schottky Barrier Rectifier Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High Surge capability
20	MBRF20100CT	Taiwan Semiconductor	(MBRF2035CT - MBRF20200CT) Isolated Schottky Barrier Rectifiers UL Recognized File # E-326243 Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward vol