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Super Fast Recovery Diode 1)Small power mold type.(PMDS) 2)high switching speed 3)Low forward voltage Structure Construction Silicon epitaxial planer Taping dimensions(Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75± 0.1 0.3 5.5± 0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolu |
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Fast Recovery Diodes • Small mold type.(TUMD2) • Ultra high-speed switching and high reliability. Product specifications Absolute maximum ratings (Ta=25ºC) Rated parameters Repetitive peak reverse voltage VRM(V) Reverse voltage(DC) VR(V) Forward current IF Average recti |
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Super Fast Recovery Diode 1) Small mold type (UMD2) 2) High speed switching Construction Silicon epitaxial planar type 1.70±0.10 2.50±0.20 （0～0.1） （0.4±0.1） 0.30±0.05 0.70 0.20 0.10 ROHM : UMD2 JEDEC : SOD-323 dot (year,week,day,factory) Taping Dimensions (Unit |
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Fast recovery diode 1) Small power mold type (PMDS) 2) Ultra low VF 3) Very fast recovery 4) Low switching loss CATHODE MARK 2.6 + − 0.1 0.9 + − 0.1 3.5 + − 0.2 68 ROHM : PMDU 0.1 0.1+ − 0.05 zConstruction Silicon epitaxial planar zAbsolute maximum ratings (Ta=2 |
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Switching diode 1) Surface mounting type (TUMD2) 2) Very fast recovery. 3) High reliability. zDimensions (Unit : mm) zLand size figure (Unit : mm) 1.1 1.3 ± 0.05 CATHO DE MARK 0 .17 ± 0 .1 0.8 ± 0.0 5 0 .0 5 1.9 ± 0.1 2.5 ± 0.2 0.6 ± 0 .2 0 .1 zStructure Sili |
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Super Fast Recovery Diode 1)Surface mounting type (TSMD6) 2)High reliability 0.7 TSMD6 0.8 Structure (6) (5) (4) Construction Silicon epitaxial planer (1) (2) (3) Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.1 0 1.75±0.1 0.3±0.1 3.5±0.05 3.2±0. |
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Fast Recovery Diodes • Small mold type.(TUMD2) • Low VF and high-speed switching. Product specifications Absolute maximum ratings (Ta=25ºC) Rated parameters Repetitive peak reverse voltage VRM(V) Reverse voltage(DC) VR(V) Forward current IF Average rectified forward cur |
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Rohm |
Fast Recovery Diodes • Small, power mold type.(PMDS) • Ultra-low VF, ultra high-speed switching and low switching loss products. Product specifications Absolute maximum ratings (Ta=25ºC) Rated parameters Repetitive peak reverse voltage VRM(V) Reverse voltage(DC) VR(V) F |
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Super Fast Recovery Diode 1)Small power mold type. （PMDS） 2)high switching speed 3)Low forward voltage 1.5±0.2 2.0±0.2 ROHM : PMDS JEDEC : SOD-106 Manufacture date ① ② ●Structure ●Construction Silicon epitaxial planar ●Taping dimensions （Unit : mm） 4.0±0.1 2.0±0.05 φ1.5 |
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Super Fast Recovery Diode 1) Small mold type (UMD2) 0.30±0.05 +0.20 0.70 -0.10 lStructure 2) High speed switching ROHM : UMD2 JEDEC : SOD-323 dot (year,week,day,factory) lConstruction Silicon epitaxial planar type lTaping Dimensions (Unit : mm) f1.5 -0 +0.1 Anode f1.0 |
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Super Fast Recovery Diode 1) Low forward voltage 2) Low switching loss lConstruction Silicon epitaxial planar type 0.9±0.1 ROHM : PMDU JEITA : SOD-123 1 : Manufacture Date 0.8±0.1 lTaping Dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φf11..5555±00.0.055 PMDU lStructure Cath |
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Super Fast Recovery Diode 1) Low forward voltage d 2) Low switching loss de Construction n s Silicon epitaxial planar type 0.9±0.1 ROHM : PMDU JEITA : SOD-123 1 : Manufacture Date 0.8±0.1 Taping Dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ11..5555±00.0.055 Structure |
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Fast recovery diode 1) Small power mold type (PMDS) 2) Ultra low VF 3) Very fast recovery 4) Low switching loss CATHODE MARK 2.6 + − 0.1 0.9 + − 0.1 3.5 + − 0.2 65 ROHM : PMDU 0.1 0.1+ − 0.05 zConstruction Silicon epitaxial planar zAbsolute maximum ratings (Ta=2 |
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Fast recovery diode 1) Small power mold type. (TSMD6) 2) Very fast recovery. 3) High reliability 0.45 0.35 2.8±0.2 0.35 0.45 ＋0.2 －0.1 1.0 min. 0～0.1 0.3～0.6 0.7 0.8 (1) (2) 0.95 (3) 0.33±0.03 0.7±0.1 0.85±0.1 1.0Max TSMD6 zConstruction Silicon epitaxial pl |
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Fast recovery diode 1) Small mold type (TUMD2) 2) Ultra high switching speed 3) High reliability. zDimensions (Unit : mm) 0.17±0.1 0.05 1.3±0.05 zLand size figure (Unit : mm) 1.1 1.9±0.1 2.5±0.2 zConstructure Silicon epitaxial planar 0.8±0.05 TUMD2 zConstructur |
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Fast recovery Diodes 1) Ultra low VF very fast recovery 2) Fast recovery 3) Low switching loss 4) Standard package TO-220FN, CPD 5.6 2.3 2.3 0.55 1.2 (1) Anode (2) Cathode (3) Anode (1) (2) (3) TO-220FN 10.0 φ3.2 4.5 15.0 12.0 8.0 5.0 1.2 1.3 0.8 (1) Anode ( |
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Super Fast Recovery Diode 1) Small power mold type. (PMDU) 2) High switching speed. 3) Low Reverse current 2.6±0.1 3.5±0.2 PMDU zStructure zConstruction Silicon epitaxial planar 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 zTaping specifications (Unit : |
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MOSFET 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT3). 4) Pb-free lead plating ; RoHS compliant lOutline TUMT3 (3) (1) (2) lInner circuit (1) Gate (2) Source (3) Drain *1 ESD PROTECTION DIODE *2 BODY D |
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Super Fast Recovery Diode 1) Small mold type (TUMD2M) 2) High speed switching 3) Low forward voltage (2) ROHM : TUMD2M Manufacture Date 0.4±0.10 0～0.1 TUMD2M lStructure lConstruction Silicon epitaxial planar type lTaping Dimensions (Unit : mm) Cathode Anode lAbsolute |
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Super Fast Recovery Diode 1) Small mold type (TUMD2M) 2) High speed switching 3) Low forward voltage (2) ROHM : TUMD2M Manufacture Date 0.4±0.10 0～0.1 TUMD2M lStructure lConstruction Silicon epitaxial planar type lTaping Dimensions (Unit : mm) Cathode Anode lAbsolute |
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