| No. | Part # | Manufacturer | Description | Datasheet |
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ST Microelectronics |
(T0805xH / T0809xH) Sensitive Gate Triacs |
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ST Microelectronics |
QUAD 2-INPUT AND GATE PTION PIN No 1, 4, 9, 12 2, 5, 10, 13 3, 6, 8, 11 7 14 SYMBOL 1A to 4A 1B to 4B 1Y to 4Y GND VCC NAME AND FUNCTION Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE A L L H H B L H L H Y L L L H ABSOLUTE MAXIMUM R |
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ST Microelectronics |
(T0805xH / T0809xH) Sensitive Gate Triacs |
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STMicroelectronics |
SINGLE 2-INPUT AND GATE Obsolete ProduPIN CONNECTION AND IEC LOGIC SYMBOLS April 2004 1/9 74V1T08 INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN N° 1 2 4 3 5 SYMBOL 1A 1B 1Y GND VCC NAME AND FUNCTION Data Input Data Input Data Output Ground (0V) Positive Supply Voltag |
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STMicroelectronics |
QUAD 2-INPUT AND GATE NMOS and CMOS output voltage levels. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. OObbssoolleettee PProduct(s)PIN CONNECTION AND IEC LOGIC SYMBOLS |
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STMicroelectronics |
64 Kbit 8Kb x 8 TIMEKEEPER SRAM ■ Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ BYTEWIDE™ RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds ■ Typical clock accuracy of ±1 minute a month, at 25 °C ■ Au |
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ST Microelectronics |
64 Kbit 8Kb x 8 TIMEKEEPER SRAM ■ Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ BYTEWIDE™ RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds ■ Typical clock accuracy of ±1 minute a month, at 25 °C ■ Au |
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SamHop Microelectronics |
N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. ID 2.5A R DS(ON) (m ) Max 225 @ VGS=10V 360 @ VGS=4.5V D G G S STT SERIES SOT - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symb |
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STMicroelectronics |
QUAD 2-INPUT AND GATE ESD immunity and transient excess voltage. DESCRIPTION The 74VHCT08A is an advanced high-speed CMOS QUAD 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. PIN CONNECTION AND IEC LOGIC SYMBOLS |
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STMicroelectronics |
FAST RECOVERY RECTIFIER DIODES °C Tj = 100°C VF Tj = 25°C Tj = 100°C IF = 8A Test Conditions VR = VRRM Min. Typ. Max. 35 2 1.9 1.8 Unit µA mA V RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C IF = 1A IF = 0.5A Test Conditions diF/dt = - 15A/µs IR = 1A VR = 30V Irr = 0.25A Min. Typ. |
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ST Microelectronics |
(ST62T08C / ST62T09C / ST62T10C / ST62T20C / ST62E20C) 8-BIT OTP/EPROM MCUs One external Non-Maskable Interrupt ST626x-EMU2 Emulation and Development System (connects to an MS-DOS PC via a parallel port) PDIP20 PSO20 CDIP20W (See end of Datasheet for Ordering Information) DEVICE SUMMARY DEVICE ST62T08C ST62T09C ST62T10C |
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ST Microelectronics |
(ST62T08C / ST62T09C / ST62T10C / ST62T20C / ST62E20C) 8-BIT OTP/EPROM MCUs One external Non-Maskable Interrupt ST626x-EMU2 Emulation and Development System (connects to an MS-DOS PC via a parallel port) PDIP20 PSO20 CDIP20W (See end of Datasheet for Ordering Information) DEVICE SUMMARY DEVICE ST62T08C ST62T09C ST62T10C |
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ST Microelectronics |
(ST62T08C / ST62T09C / ST62T10C / ST62T20C / ST62E20C) 8-BIT OTP/EPROM MCUs One external Non-Maskable Interrupt ST626x-EMU2 Emulation and Development System (connects to an MS-DOS PC via a parallel port) PDIP20 PSO20 CDIP20W (See end of Datasheet for Ordering Information) DEVICE SUMMARY DEVICE ST62T08C ST62T09C ST62T10C |
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ST Microelectronics |
DUAL 2-INPUT AND GATE GIC SYMBOLS June 2003 1/7 74V2T08 INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN N° 1, 5 2, 6 7, 3 4 8 SYMBOL 1A, 2A 1B, 2B 1Y, 2Y GND VCC NAME QND FUNCTION Data Input Data Input Data Output Ground (0V) Positive Supply Voltage TRUTH TABLE nA L L H |
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STMicroelectronics |
8-BIT OTP MCUs 8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 GENERAL DESCRIPTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.1 INTRODUCTION. |
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STMicroelectronics |
FAST RECOVERY RECTIFIER DIODE °C Tj = 100°C VF Tj = 25°C Tj = 100°C IF = 8A Test Conditions VR = VRRM Min. Typ. Max. 35 2 1.9 1.8 Unit µA mA V RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C IF = 1A IF = 0.5A Test Conditions diF/dt = - 15A/µs IR = 1A VR = 30V Irr = 0.25A Min. Typ. |
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STMicroelectronics |
FAST RECOVERY RECTIFIER DIODE °C Tj = 100°C VF Tj = 25°C Tj = 100°C IF = 8A Test Conditions VR = VRRM Min. Typ. Max. 35 2 1.9 1.8 Unit µA mA V RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C IF = 1A IF = 0.5A Test Conditions diF/dt = - 15A/µs IR = 1A VR = 30V Irr = 0.25A Min. Typ. |
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STMicroelectronics |
FAST RECOVERY RECTIFIER DIODES AND BENEFITS s VERY LOW REVERSE RECOVERY TIME s VERY LOW SWITCHING LOSSES s LOW NOISE TURN-OFF SWITCHING s INSULATED PACKAGE: TO-220AC Insulation voltage: 2500 VRMS Capacitance = 7 pF DESCRIPTION This single rectifier is suited for Switch Mode Power |
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STMicroelectronics |
FAST RECOVERY RECTIFIER DIODE ARACTERISTICS Synbol IR Tj = 25°C Tj = 100°C VF Tj = 25°C Tj = 100°C IF = 8A Test Conditions VR = VRRM Min. Typ. Max. 35 2 1.9 1.8 Unit µA mA V RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C IF = 1A IF = 0.5A Test Conditions diF/dt = - 15A/µs IR = 1A |
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STMicroelectronics |
FAST RECOVERY RECTIFIER DIODES AND BENEFITS s VERY LOW REVERSE RECOVERY TIME s VERY LOW SWITCHING LOSSES s LOW NOISE TURN-OFF SWITCHING s INSULATED PACKAGE: TO-220AC Insulation voltage: 2500 VRMS Capacitance = 7 pF DESCRIPTION This single rectifier is suited for Switch Mode Power |
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