Unity Opto Technology MIT datasheet

No.	Part #	Manufacturer	Description
1	MIE-144H4	Unity Opto Technology	GaAlAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE l Selected to specific on-line intensity and radiant intensity ranges 1.0MIN. (.039) 2.54±0.08 (.100±.003) (SEE NOTE 3) l Low cost , plastic side looking package C A Notes : 1. All dimensions are in millimeters.(inches). 2. Protruded resin unde
2	MIE-514A4	Unity Opto Technology	AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE l SEE NOTE 2 FLAT DENOTES CATHODE High radiant power and high radiantintensity Standard T-1 3/4 ( φ 5mm) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : 16° 2.54NOM. (.100) SEE NOTE 3 1.00MIN. (.040) 0
3	MIE-524L3	Unity Opto Technology	GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE l 1.00 (.040) SEE NOTE 2 FLAT DENOTES CATHODE Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ 5mm ) package Peak wavelength λp = 880 nm Good spectral matching to si-photodetector Radiation angle : 20° 2.54NOM. (.100) SEE NOTE
4	MIT-5A116	Unity Opto Technology	SLOTTED PHOTOINTERRUPTER A 7.5 ± 0.3 (.295) 3.7 ± 0.2 (.146) 10.0 (.394) 2.5 (.098) Unit mA V mW V V mW mW Unity Opto Technology Co., Ltd. 7.0 (.276) 04/01/2002 MIT-5A116 Optical-Electrical Characteristics Parameter Input Forward Voltage Reverse Current Output Col
5	MIE-514H4	Unity Opto Technology	GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE l FLAT DENOTES CATHODE Ultra-High radiant incidence High response speed High modulation bandwidth Standard T-1 3/4 ( φ 5mm ) package Radiation angle : 15° Peak wavelength λp = 850 nm A 1.00MIN. (.040) 2.54NOM. (.100) SEE NOTE 3 0.50 TYP. (.020) 23.
6	MIE-546A2U	Unity Opto Technology	AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE l l l l l High radiant power and high radiant intensity Standard T-1 3/4 ( φ 5mm) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : 45° 1.00 (.040) FLAT DENOTES CATHODE 23.4 0MIN. (.920) .50 TYP. (.020)
7	MIE-111A1	Unity Opto Technology	AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE l 0.5 TYP. (.020) 1.0 MIN. (.039) 2.54 NOM. (.100) SEE NOTE 3 Selected to specific on-line intensity and radiant intensity l Low cost, plastic side looking package C A NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Lead sp
8	MIE-114A1	Unity Opto Technology	GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE l CATHODE Selected to specific on-line intensity and 1.0 MIN. (.040) 2.54 NOM. (.100) SEE NOTE 3 0.5 TYP. (.020) radiant intensity ranges l Low cost, plastic side looking package l Mechanically and spectrally matched to the MID-11422 of phototra
9	MIE-114A2	Unity Opto Technology	GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE l CATHODE 0.5 TYP. (.020) 1.0 MIN. (.040) 2.54 NOM. (.100) SEE NOTE 3 Selected to specific on-line intensity and radiant intensity ranges l Low cost , plastic side looking package Mechanically and spectrally matched to The MID-11422 of phototran
10	MIE-144A1	Unity Opto Technology	AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE l Selected to specific on-line intensity and radiant intensity ranges 1.0min 0.48±0.05 (.019±.002) l Low cost, plastic side looking package 2.54 ±0.12 (.100±.005) (SEE NOTE 3) C A Notes : 1. All dimensions are in millimeters.(inches). 2. Prot
11	MIE-144G1	Unity Opto Technology	GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE l Selected to specific on-line intensity and radiant intensity ranges 1.0MIN. (.039) 2.54±0.08 (.100±.003) (SEE NOTE 3) l l Low cost , plastic side looking package Mechanically and spectrally matched to The MID-14422 of phototransistor . C A Not
12	MIE-184A4	Unity Opto Technology	GaAlAs/GaAs 1.8mm PACKAGE INFRARED EMITTING DIODE l l l l l 3.00 (.118) High radiant power and high radiant intensity Suitable for DC and high pulse current operation Special 1.8mm package, radiation angle: 35° Peak wavelength λp = 940 nm Good spectral matching to Si-Photodetector 0.50 TYP. (.020)
13	MIE-334A4	Unity Opto Technology	AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE l l l l l l 23.40MIN. (.920) High radiant power and high radiant intensity Suitable for DC and high pulse current operation Standard T-1 ( φ 3mm ) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : ±15°
14	MIE-514L3	Unity Opto Technology	GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE l 1.00 (.040) SEE NOTE 2 FLAT DENOTES CATHODE Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ 5mm ) package Peak wavelength λp = 880 nm Good spectral matching to si-photodetector Radiation angle : 16° 2.54NOM. (.100) SEE NOTE
15	MIE-516A2U	Unity Opto Technology	AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE l l l l l High radiant power and high radiant intensity Standard T-1 3/4 ( φ 5mm) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : 16° 1.00 (.040) FLAT DENOTES CATHODE 23.4 0MIN. (.920) 0.50 TYP. (.020
16	MIE-524A4	Unity Opto Technology	AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE l 23.40 MIN. (.920) 0.50 TYP. (.020) High radiant power and high radiant intensity Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ 5mm ) package, radiation angle : 20° Peak wavelength λp = 940 nm Good spectral matching to si-p
17	MIE-524H4	Unity Opto Technology	GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE l FLAT DENOTES CATHODE Ultra-High radiant incidence Ultra-high speed response High modulation bandwidth Standard T-1 3/4 ( φ 5mm ) package Radiation angle : 20° Peak wavelength λp = 850 nm A 1.00MIN. (.040) 2.54NOM. (.100) SEE NOTE 3 0.50 TYP. (.02
18	MIE-534A4	Unity Opto Technology	AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE SEE NOTE 2 l l l l l 1.00 (.039) High radiant power and high radiant intensity FLAT DENOTES CATHODE Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ 5mm ) package, radiant angle : 30° Peak wavelength λp = 940 nm Good spectral
19	MIE-534H4	Unity Opto Technology	GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE ultra-high power, high response speed and molded package with higher radiant intensity. In addition to improving the S/N ratio in applied optical systems, the MIE-534H4 has greatly improved long-distance characteristics as well as significantly incre
20	MIE-546A4U	Unity Opto Technology	AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE l l l l l High radiant power and high radiant intensity Standard T-1 3/4 ( φ 5mm) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : 45° 1.00 (.040) FLAT DENOTES CATHODE 23.4 0MIN. (.920) .50 TYP. (.020)