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White Electronic Designs |
1Mx32 FLASH MODULE 1Mx32 and 2x1Mx32 Densities Based on AMD - AM29LV008T Flash Device Fast Read Access Time - 80ns 3.3V Only Reprogramming Flexible, Sector Architecture One 16Kbyte, two 8Kbyte, one 32Kbyte and fifteen 64Kbyte sectors Any combinat |
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White Electronic Designs |
1Mx32 FLASH MODULE 1Mx32 and 2x1Mx32 Densities Based on AMD - AM29LV008T Flash Device Fast Read Access Time - 80ns 3.3V Only Reprogramming Flexible, Sector Architecture One 16Kbyte, two 8Kbyte, one 32Kbyte and fifteen 64Kbyte sectors Any combinat |
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White Electronic Designs |
512Kx32 FLASH 512Kx32, 2x512Kx32 and 4x512Kx32 Densities Based on AMDs - AM29LV004T Flash Device Fast Read Access Time - 80ns 3V Only Reprogramming Flexible, Sector Architecture One 16Kbyte, two 8Kbyte, one 32Kbyte and seven 64Kbyte sectors Any combination of sect |
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White Electronic Designs |
1Mx32 FLASH MODULE n n n n n 1Mx32 and 2x1Mx32 Densities Based on Intel's E28F008SA Flash Device Fast Read Access Time - 90ns 5V-Only Reprogamming or 12V Reprogram. Low Power Dissipation n n n n n n n 60mA per Device Active Current 10µA per Device CMOS Standby Current |
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White Electronic Designs |
2Mx32 FLASH MODULE 2Mx32 and 2x2Mx32 Densities Based on Intel's E28F016S5 Flash Device Fast Read Access Time - 90ns 5V - Only Reprogramming 12V VPP Production Programming Low Power Dissipation 35mA per Device Active Write Current 25µA per Device CMOS St |
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White Electronic Designs |
(EDI7F292MC / EDI7F492MC) Boot-Only Sector Erase Flash Memory 5.0 Volt ± 10% fir read and write operations • Minimizes system level power requirements Compatible with JEDEC-standards • Pinout and software compatible with single-power supply Flash • Superior inadvertent write protection 80 SIMM (JEDEC) Minimum 10 |
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White Electronic Designs |
2Mx32 FLASH MODULE 2Mx32 and 2x2Mx32 Densities Based on AMD - AM29LV017B Flash Device Fast Read Access Time - 90ns 3.3V-Only Reprogramming Sector Erase Architecture Uniform sectors of 64 Kbytes each Any combination of sectors can be erased Supports full chip erase Sect |
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White Electronic Designs |
512Kx32 FLASH 512Kx32, 2x512Kx32 and 4x512Kx32 Densities Based on AMDs - AM29LV004T Flash Device Fast Read Access Time - 80ns 3V Only Reprogramming Flexible, Sector Architecture One 16Kbyte, two 8Kbyte, one 32Kbyte and seven 64Kbyte sectors Any combination of sect |
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White Electronic Designs |
4x1Mx32 FLASH MODULE 4 x1Mx32 Based on Intel's E28F008S3 Flash Device Fast Read Access Time - 120ns Flexible Smart Voltage 2.7-3.6V Program Erase 2.7-3.6V Read Operation 12Vpp Fast Production Programming 30mA per Device Active Current 20A per Device CMO |
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White Electronic Designs |
4x2Mx32 FLASH MODULE n n n n n 4x2Mx32 Based on Sharp's LH28F016SU Flash Device Fast Read Access Time - 80ns 5V Only Reprogramming Low Power Dissipation n n n n n n n 60mA per Device Active Current 10µA per Device CMOS Standby Current EDI7F4342MC DESCRIPTION The EDI7F4 |
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White Electronic Designs Corporation |
1Mx32 FLASH MODULE 1Mx32 and 2x1Mx32 Densities Based on AMD - AM29F080 Flash Device Fast Read Access Time - 80ns 5V Only Reprogramming Sector Erase Architecture Uniform sectors of 64 Kbytes each Any combination of sectors can be erased Also suppor |
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White Electronic Designs |
256K x 8 Monolithic SRAM 256Kx8 CMOS Static Random Access Memory • Access Times of 70, 85, 100ns • Data Retention Function (LP Versions) • TTL Compatible Inputs and Outputs • Fully Static, No Clocks JEDEC Approved Pinout • 32 pin Ceramic DIP, 0.6 mils wide (Package 9) ■ Sing |
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White Electronic Designs |
2Mx32 FLASH MODULE 2Mx32 and 2x2Mx32 Densities Based on AMD - AM29LV017B Flash Device Fast Read Access Time - 90ns 3.3V-Only Reprogramming Sector Erase Architecture Uniform sectors of 64 Kbytes each Any combination of sectors can be erased Supports full chip erase Sect |
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White Electronic Designs |
1Mx32 FLASH MODULE 1Mx32 and 2x1Mx32 Densities Based on AMD - AM29F080 Flash Device Fast Read Access Time - 80ns 5V Only Reprogramming Sector Erase Architecture Uniform sectors of 64 Kbytes each Any combination of sectors can be erased Also suppor |
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White Electronic Designs |
2Mx32 FLASH MODULE n n n n n 2Mx32 and 2x2Mx32 Densities Based on AMD - AM29F016 Flash Device Fast Read Access Time - 90ns 5V-Only Reprogamming Sector Erase Architecture n n n n n Uniform sectors of 64 Kbytes each Any combination of sectors can be erased Also supports |
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White Electronic Designs |
1Mx32 FLASH MODULE n n n n n 1Mx32 and 2x1Mx32 Densities Based on Intel's E28F008SA Flash Device Fast Read Access Time - 90ns 5V-Only Reprogamming or 12V Reprogram. Low Power Dissipation n n n n n n n 60mA per Device Active Current 10µA per Device CMOS Standby Current |
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White Electronic Designs |
1Mx32 FLASH MODULE n n n n 1Mx32 and 2x1Mx32 Densities Based on Intel's 28F008S3 Flash Device Fast Read Access Time - 120ns Flexible Smart Voltage n n n n n n n n n n n 3.0 - 3.6V Program/Erase 3.0 - 3.6V Read 30mA per Device Active Current 10µA per Device CMOS Standby |
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White Electronic Designs |
4x1Mx32 FLASH MODULE n n n n n 4x1Mx32 Based on AMD - AM29F008T Flash Device Fast Read Access Time - 80ns 3.3V Only Reprogramming Flexible, Sector Architecture n n n n n One 16Kbyte, two 8Kbyte, one 32Kbyte and fifteen 64Kbyte sectors Any combination of sectors can be er |
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White Electronic Designs |
4x1Mx32 FLASH MODULE n 4x1Mx32 n Based on Intel's E28F008SA Flash Device n Fast Read Access Time - 90ns n 5- Volt-Only Reprogramming n Low Power Dissipation 60mA per Device Active Current 10µA per Device CMOS Standby Current n Typical Endurance >100,000 Cycles n Sing |
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White Electronic Designs Corporation |
EDI8F32256C 256Kx32 bit CMOS Static Random Access Memory • Access Times BiCMOS: 10 and 12ns CMOS: 15, 20, 25, and 35ns • Individual Byte Selects • Fully Static, No Clocks • TTL Compatible I/O High Density Package with JEDEC Standard Pinouts • 64 Pin ZIP, No. 85 |
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