3DD8D PDF File
| Part Number | 3DD8D |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A ·Minimum Lot-to-Lot... |
| Features |
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= ...
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| Published | Jun 26, 2016 |
| Datasheet |
3DD8D PDF File
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