 |
N-channel FET
2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
Features
• High Density Cell Design for Low RDS(ON) • Voltage Controlled Small Signal Switch • Rugged and Reliable • High Saturation Current Capability
Description
These N-channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-cur-rent applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.
D
1 TO-92 1. Source 2. Gate 3. Drain
S
G
SOT-23
(TO-236AB) 2N7002/NDS7002A
G
D S
Ordering Inform...
|