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IRF630

N-channel MOSFET 

IRF630
Datasheet
N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET in a TO‑220 package

TAB

TO-220

1 23

Features

Order code

VDS

IRF630

200 V

• Extremely high dv/dt capability • Very low intrinsic capacitance • Gate charge minimized

RDS(on) max. 0.40 Ω

ID 9A

D(2, TAB)

Applications
• Switching applications

G(1) S(3)

AM01475v1_noZen

Description
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.

Product status link IRF630

Product summary

Order code

IRF630

Marking

IRF630

Package

TO-220

Packing

Tube

DS0668 - Rev 10 - December 2018 For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDDS

Drain-source voltage (VGS = 0 V)

VDGR

Drain-gate voltage (RGS = 20 kΩ)

VGS Gate-source voltage

Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C

IDM(1)

Drain current (pulsed)

PTOT

Total power dissipation at TC = 25 °C

EAS(2)

Single pulse avalanche energy

dv/dt(3)

Drain-body diode dynamic dv/dt ruggedness

Tstg Storage temperature range

TJ Operating junction temperature range

1. Pulse width is limited by...



STF5N52U

N-Channel MOSFET 

STD5N52U
Datasheet
N-channel 525 V, 1.25 Ω typ., 4.4 A, UltraFASTmesh™ Power MOSFET in a DPAK package

TAB 23 1
DPAK D(2, TAB)
G(1)
S(3)

Features

Order code

VDS

RDS(on) max.

STD5N52U

525 V

1.50 Ω

• Outstanding dv/dt capability • Gate charge minimized • Very low intrinsic capacitances • Very low RDS(on) • Extremely low trr

ID 4.4 A

PTOT 70 W

Applications
• Switching applications

AM01476v1_tab

Description
This device is N-channel Power MOSFET developed using UltraFASTmesh™ technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode.

Product status link STD5N52U

Product summary

Order code

STD5N52U

Marking

5N52U

Package

DPAK

Packing

Tape and reel

DS6261 - Rev 4 - December 2018 For further information contact your local STMicroelectronics sales office.

www.st.com

STD5N52U
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VGS ID ID IDM (1) PTOT dv/dt Tstg Tj ESD

Gate- source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC= 100 °C Drain current (pulsed) Total power dissipation at TC = 25 °C Peak diode recovery voltage slope Storage temperature range Operating junction temperature range Gate-source human body model (R = 1.5 kΩ, C = 100 pF)

1. Pulse width limited by safe op...



IRFZ44NPBF

Power MOSFET 

PD - 94787

IRFZ44NPbF
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

HEXFET® Power MOSFET
D

VDSS = 55V RDS(on) = 17.5mΩ

G S

ID = 49A

Description

TO-220AB

Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew

Max.
49 35 160 94...




IRF740

Power MOSFET 

Power MOSFET

IRF740, SiHF740
Vishay Siliconix

PRODUCT SUMMARY

VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration

400 VGS = 10 V
63 9.0 32 Single

0.55

TO-220AB

D

G

S D G

S N-Channel MOSFET

ORDERING INFORMATION
Package Lead (Pb)-free
SnPb

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

Available
RoHS*
COMPLIANT

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

TO-220AB IRF740PbF SiHF740-E3 IRF740 SiHF740

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor

VGS at 10 V

TC = 25 °C TC = 100 °C

VDS VGS
ID
IDM

Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc

TC = 25 °C

EAS IAR EAR PD dV/dt

Operating Junc...



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