DatasheetsPDF.com

BD950

Inchange Semiconductor
Part Number BD950
Manufacturer Inchange Semiconductor
Title Silicon PNP Power Transistor
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= -5...
Features L CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown...
Published Jun 26, 2016
Datasheet PDF File BD950 PDF File


BD950
BD950


Features
L CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage I...



Similar Datasheet


INDEX :57ABCDEFGHIJKLMNOPQRSTUVWXYZ

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)