| Part Number | MTB3N100E |
| Manufacturer | ON Semiconductor |
| Title | High Energy Power FET |
| Description | MTB3N100E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate http://ons... |
| Features |
areas are critical and offer additional safety margin against unexpected voltage transients.
3.0 AMPERES, 1000 VOLTS RDS(on) = 4.0 W
CASE 418B−02, Style 2 D2PAK D
• Robust High Voltage Termination • Avalanche Energy Specified ®G • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fas... |
| File Size | 276.02KB |
| Datasheet |
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MTB3N100E : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N100E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB3N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high en.