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PTVA035002EV


Part Number PTVA035002EV
Manufacturer Infineon
Title Thermally-Enhanced High Power RF LDMOS FET
Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gai...
Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA035002EV Package H-36275-4 Gain (dB) Drain Efficiency (%) Pulsed CW Performance 450 MHz, VD...

File Size 366.93KB
Datasheet PTVA035002EV PDF File








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