| Part Number | MDD1504 |
| Manufacturer | MagnaChip |
| Title | N-Channel Trench MOSFET |
| Description | Features The MDD1504 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching perform... |
| Features |
The MDD1504 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1504 is suitable device for DC to DC converter and general purpose applications.
VDS = 30V ID = 31.5A @VGS = 10V RDS(ON) (MAX) 12....
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| File Size | 660.82KB |
| Datasheet |
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MDD1501 : The MDD1501 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1501 is suitable device for DC to DC converter and general purpose applications. Features VDS = 30V ID = 67.4A @VGS = 10V RDS(ON) (MAX) 5.6mΩ @VGS = 10V 8.6mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested D G Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=70oC Ther.
MDD1502 : The MDD1502 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1502 is suitable device for DC to DC converter and general purpose applications. Features VDS = 30V ID = 45.7A @VGS = 10V RDS(ON) (MAX) 8.5mΩ @VGS = 10V 13.0mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested D D G S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range G S TC=25oC TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC T.
MDD1503 : Features The MDD1503 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1503 is suitable device for DC to DC converter and general purpose applications. VDS = 30V ID = 87.5A @VGS = 10V RDS(ON) (MAX) 4.7mΩ @VGS = 10V 6.8mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested D G Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=70oC Thermal Char.