| Part Number | SW6N60 |
| Manufacturer | SEMIPOWER |
| Title | MOSFET |
| Description | These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology. This adva... |
| Features |
TO-220F
TO-251
TO-252
■ High ruggedness ■ RDS(ON) (Max 1.5Ω)@VGS=10V ■ Gate Charge (Typical 29nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 12 3 12 3 1. Gate 2. Drain 3. Source General Description These N-channel enhancement mode power field effect transistors are produced us... |
| File Size | 484.48KB |
| Datasheet |
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SW6N60D : This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes BVDSS : 600V ID : 6A RDS(ON) :1.4Ω 2 1 3 Item Sales Type 1 SW F 6N60D 2 SW D 6N60D 3 SW N 6N60D Marking SW6N60D SW6N60D SW6N60D Package TO-220F TO-252 TO-251N Packaging TUBE REEL TUBE Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avala.
SW6N65 : These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology. This advanced technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers BVDSS : 600V ID : 6A RDS(ON) :1.5ohm 2 1 3 Order Codes Item 1 2 3 Sales Type SW F 6N65 SW I 6N65 SW D 6N65 Marking SW6N65 SW6N65 SW6N65 Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuou.