MJE172

MJE170 : Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS Low Power Audio Amplifier and Low Current, High Speed Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 500 mA; IB = 50 mA D.C. current gain IC = 100 mA; VCE =.

MJE170 : 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

MJE170 : ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -40V ·DC Current Gain— : hFE = 30(Min) @ IC= -0.5 A = 12(Min) @ IC= -1.5 A ·Complement to the NPN MJE180 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low power audio amplifier applications. ·Low current high speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-peak -6 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Ti .

MJE170 : MJE170/171/172 MJE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications 1 TO-126 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : MJE170 : MJE171 : MJE172 : MJE170 : MJE171 : MJE172 1. Emitter Value - 60 - 80 - 100 - 40 - 60 - 80 -7 -3 -6 -1 12.5 1.5 150 - 65 ~ 150 Units V V V V V V V A A A W W °C °C VCEO Collector-Emitter Voltage VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Elec.

MJE170 : Elektronische Bauelemente MJE170 / MJE171 / MJE172 PNP General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-126 FEATURES  Low frequency amplifier  Low current  High speed switching applications ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Parameter Symbol Ratings MJE170 -60 Collector - Base Voltage MJE171 MJE172 VCBO -80 -100 MJE170 -40 Collector - Emitter Voltage MJE171 MJE172 VCEO -60 -80 Emitter - Base Voltage Collector Current -Continuous Cpllector Power Dissipation Junction, Storage Temperature VEBO IC PC TJ, TSTG -7 -3 1.5 +150, -65 ~ +150 A E F N L M K B H J C D Emitter Collector Base .

MJE170 : www.DataSheet4U.com MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features http://onsemi.com • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171, MJE181 = 80 Vdc − MJE172, MJE182 DC Current Gain − hFE = 30 (Min) @ IC = 0.5 Adc = 12 (Min) @ IC = 1.5 Adc Current−Gain − Bandwidth Product − fT = 50 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages − ICBO = 100 nA (Max) @ Rated VCB Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Machine Model, C Hum.

MJE170G : MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • High DC Current Gain • High Current−Gain − Bandwidth Product • Annular Construction for Low Leakages • Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Base Voltage MJE170G, MJE180G MJE171G, MJE181G MJE172G, MJE182G Collector−Emitter Voltage MJE170G, MJE180G MJE171G, MJE181G MJE172G, MJE182G Symbol VCB VCEO Value 60 80 100 40 60 80 Unit Vdc Vdc Emitter−Base Voltage Collector Curren.

MJE171 : Elektronische Bauelemente MJE170 / MJE171 / MJE172 PNP General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-126 FEATURES  Low frequency amplifier  Low current  High speed switching applications ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Parameter Symbol Ratings MJE170 -60 Collector - Base Voltage MJE171 MJE172 VCBO -80 -100 MJE170 -40 Collector - Emitter Voltage MJE171 MJE172 VCEO -60 -80 Emitter - Base Voltage Collector Current -Continuous Cpllector Power Dissipation Junction, Storage Temperature VEBO IC PC TJ, TSTG -7 -3 1.5 +150, -65 ~ +150 A E F N L M K B H J C D Emitter Collector Base .

MJE171 : Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS Low Power Audio Amplifier and Low Current, High Speed Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 500 mA; IB = 50 mA D.C. current gain IC = 100 mA; VCE =.

MJE171 : 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

MJE171 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE171/D Complementary Plastic Silicon Power Transistors . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182 • DC Current Gain — hFE = 30 (Min) @ IC = 0.5 Adc hFE = 12 (Min) @ IC = 1.5 Adc • Current–Gain — Bandwidth Product — fT = 50 MHz (Min) @ IC = 100 mAdc • Annular Construction for Low Leakages — ICBO = 100 nA (Max) @ Rated VCB MAXIMUM RATINGS MJE171 MJE181 80 60 MJE172 MJE182 100 80 MJE171* MJE172* NPN MJE181* MJE182* *Motorola Preferred Device PNP ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ.

MJE171 : MJE170/171/172 MJE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications 1 TO-126 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : MJE170 : MJE171 : MJE172 : MJE170 : MJE171 : MJE172 1. Emitter Value - 60 - 80 - 100 - 40 - 60 - 80 -7 -3 -6 -1 12.5 1.5 150 - 65 ~ 150 Units V V V V V V V A A A W W °C °C VCEO Collector-Emitter Voltage VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Elec.

MJE171 : ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -60V ·DC Current Gain— : hFE = 30(Min) @ IC= -0.5 A = 12(Min) @ IC= -1.5 A ·Complement to the NPN MJE181 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low power audio amplifier applications. ·Low current high speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE VCBO Collector-Base Voltage -80 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -7 IC Collector Current-Continuous -3 ICM Collector Current-peak -6 IB Base Current -1 Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ 1.5 12.5 Ti Junctio.

MJE171 : www.DataSheet4U.com MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features http://onsemi.com • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171, MJE181 = 80 Vdc − MJE172, MJE182 DC Current Gain − hFE = 30 (Min) @ IC = 0.5 Adc = 12 (Min) @ IC = 1.5 Adc Current−Gain − Bandwidth Product − fT = 50 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages − ICBO = 100 nA (Max) @ Rated VCB Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Machine Model, C Hum.

MJE171G : MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • High DC Current Gain • High Current−Gain − Bandwidth Product • Annular Construction for Low Leakages • Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Base Voltage MJE170G, MJE180G MJE171G, MJE181G MJE172G, MJE182G Collector−Emitter Voltage MJE170G, MJE180G MJE171G, MJE181G MJE172G, MJE182G Symbol VCB VCEO Value 60 80 100 40 60 80 Unit Vdc Vdc Emitter−Base Voltage Collector Curren.

MJE172 : Elektronische Bauelemente MJE170 / MJE171 / MJE172 PNP General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-126 FEATURES  Low frequency amplifier  Low current  High speed switching applications ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Parameter Symbol Ratings MJE170 -60 Collector - Base Voltage MJE171 MJE172 VCBO -80 -100 MJE170 -40 Collector - Emitter Voltage MJE171 MJE172 VCEO -60 -80 Emitter - Base Voltage Collector Current -Continuous Cpllector Power Dissipation Junction, Storage Temperature VEBO IC PC TJ, TSTG -7 -3 1.5 +150, -65 ~ +150 A E F N L M K B H J C D Emitter Collector Base .

MJE172 : Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS Low Power Audio Amplifier and Low Current, High Speed Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 500 mA; IB = 50 mA D.C. current gain IC = 100 mA; VCE =.